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US 8,552,480 B2Granted
Aluminum indium antimonide focal plane array
AssigneeFLIR Systems, Inc.
InventorsRichard E. Bornfreund, Jeffrey B. Barton
Life of this patent
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Abstract
In one embodiment, a detector includes an AlzIn(1-x)Sb passivation/etch stop layer, an AlxIn(1-x)Sb absorber layer disposed above the Alzn(1-z)Sb passivation/etch stop layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<z and x<y. The detector further includes a junction formed in a region of the AlxIn(1−x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.
Claims20
A detector comprising:
- an AlzIn(1-z)Sb passivation/etch stop layer;
- an AlxIn(1-x)Sb absorber layer disposed above the AlzIn(1-z)Sb passivation/etch stop layer, wherein x<z;
- an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<y;
- a junction formed in a region of the AlxIn(1-x)Sb absorber layer;
- and
- a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.
3 more elements
An infrared sensor array comprising:
- a two-dimensional array of detectors, each of the detectors comprising:
- an AlzIn(1-z)Sb passivation/etch stop layer
- an AlxIn(1-x)Sb absorber layer disposed above the AlzIn(1-z)Sb passivation/etch stop layer, wherein x<z;
- an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<y;
- a junction formed in a region of the AlxIn(1-x)Sb absorber layer;
- a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer;
- an overglass layer disposed above the metal contact;
- and
- a bump contact disposed above the metal contact and through the overglass layer.
6 more elements
A method of fabricating a detector, the method comprising:
- providing an InSb substrate;
- forming, by epitaxial growth in one growth run, an AlzIn(1-y)Sb passivation/etch stop layer above a surface of the InSb substrate, an AlxIn(1-x)Sb absorber layer above a surface of the AlzIn(1-z)Sb passivation/etch stop layer, and an AlyIn(1-y)Sb passivation layer above the AlxIn(1-x)Sb absorber layer, wherein x<z and x<y;
- forming a junction in a region of the AlxIn(1-x)Sb absorber layer;
- forming a metal contact above the junction and through the AlyIn(1-y)Sb passivation layer;
- and
- removing the InSb substrate to expose the AlzIn(1-z)Sb passivation/etch stop layer.
3 more elements
Dependencies are inferred from the claim text.