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US 8,552,475 B2Granted
Apparatus of memory array using FinFETs
AssigneeInfineon Technologies AG
InventorsRonald Kakoschke, Klaus Schruefer
Life of this patent
Estimating the term…
Abstract
One or more embodiments relate to a memory device, comprising: a memory element; and a FinFET select device including a fin, a gate line supported by the fin, and a contact element coupled between a surface of the fin and the memory element, the contact element being in direct contact with a top surface of the fin.
Claims16
A memory device, comprising:
- a memory element;
- and
- a FinFET select device including
- a fin,
- a gate line supported by the fin, and
- a contact element coupled between a surface of the fin and the memory element, the contact element being in direct contact with a top surface of the fin.
3 more elements
A FinFET device, comprising:
- a fin;
- a gate line supported by the fin;
- and
- a contact element in direct contact with a top surface of the fin.
1 more element
A FinFET device, comprising:
- a fin;
- and
- a contact element in direct contact with a top surface of a source/drain region of the fin.
Dependencies are inferred from the claim text.