Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same

An integrated circuit device, comprising:

• a plurality of pillars protruding from a substrate in a first direction, each of the pillars including source/drain regions in opposite ends thereof and a channel region extending between the source/drain regions;
• a plurality of conductive bit lines on the substrate adjacent the pillars and extending in a second direction substantially perpendicular to the first direction;
• a plurality of conductive shield lines directly on the substrate and extending in the second direction, each of the shield lines extending between adjacent ones of the bit lines;
• and
• a junction oxide layer between the plurality of pillars and the substrate, the junction oxide layer including the plurality of bit lines thereon,
• wherein each of the shield lines is provided in a respective trench in the junction oxide layer between sidewalls of the adjacent ones of the bit lines.

An integrated circuit device, comprising:

• a plurality of pillars protruding from a substrate in a first direction, each of the pillars including source/drain regions in opposite ends thereof and a channel region extending between the source/drain regions;
• a plurality of conductive bit lines on the substrate adjacent the pillars and extending in a second direction substantially perpendicular to the first direction;
• and
• a plurality of conductive shield lines on the substrate and extending in the second direction, each of the shield lines extending between adjacent ones of the bit lines
• wherein the shield lines comprise first and second shield lines, wherein each of the first shield lines includes shield insulating layers directly on sidewalls of the adjacent ones of the bit lines, and wherein each of the second shield lines is separated from the sidewalls of the adjacent ones of the bit lines by ones of the pillars adjacent thereto.