Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same

A semiconductor apparatus comprising:

• a first semiconductor layer including a channel layer;
• a source electrode formed on the first semiconductor layer;
• a drain electrode formed at a distance from the source electrode on the first semiconductor layer;
• and
• a gate electrode formed between the source electrode and the drain electrode on the first semiconductor layer,
• wherein the drain electrode includes
• a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and
• a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region, and
• wherein a third semiconductor layer having the same conductivity type as the first semiconductor layer and having a higher impurity concentration than the first semiconductor layer is formed between the second drain region and the first semiconductor layer and;
• wherein a recess is formed in the first semiconductor layer, and the first drain region is formed in the recess.

A method of manufacturing a semiconductor apparatus comprising:

• a step of forming a first semiconductor layer including a channel layer;
• and
• a step of forming a source electrode, a drain electrode, and a gate electrode between the source electrode and the drain electrode, on the first semiconductor layer,
• wherein the drain electrode includes
• a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and
• a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region, and
• wherein a second semiconductor layer having a different conductivity type from the first semiconductor layer is formed between the first drain region and the first semiconductor layer and;
• wherein the first drain region and the second drain region are separated.