Semiconductor device
AssigneesSanyo Semiconductor Co., Ltd., Semiconductor Components Industries, LLC
InventorsShuichi Kikuchi, Shigeaki Okawa, Kiyofumi Nakaya, Shuji Tanaka
Life of this patent
Estimating the term…
Abstract
There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.
Claims12
A semiconductor device comprising:
- a semiconductor layer of a first general conductivity type;
- a first anode diffusion layer of a second general conductivity type formed in the semiconductor layer;
- a second anode diffusion layer of the second general conductivity type formed in the semiconductor layer and separated from the first diffusion layer, the second anode diffusion layer surrounding the first anode diffusion layer in plan view of the semiconductor device;
- a third anode diffusion layer of the second general conductivity type formed in the semiconductor layer so that the first and second anode diffusion layers are confined within a lateral area of the third anode diffusion layer and are physically in contact with the third anode diffusion layer;
- a cathode diffusion layer of the first general conductivity type formed in the semiconductor layer and not being disposed in the lateral area of the third anode diffusion layer;
- and
- a Schottky barrier metal layer disposed on the first, second and third anode diffusion layers and confined within the lateral area of the third anode diffusion layer in plan view of the semiconductor device.
Dependencies are inferred from the claim text.