CMOS-compatible movable microstructure based devices
OwnerLong-Sheng Faninventor
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Abstract
The present invention addresses the aims and issues of making multi layer microstructures including “metal-shell-oxide-core” structures and “oxide-shell-metal-core” structures, and mechanically constrained structures and the constraining structures using CMOS (complimentary metal-oxide-semiconductor transistors) materials and layers processed during the standard CMOS process and later released into constrained and constraining structures by etching away those CMOS materials used as sacrificial materials. The combinations of possible constrained structures and methods of fabrication are described.
Claims13
A device patterned out of a multi-layer interconnect stack atop an Integrated Circuit (IC)-substrate, the multi-layer interconnect stack having:
- a plurality of microstructures, each microstructure comprising one or more layers of conductive material and insulating material, the microstructures including a microstructure having an upper flange structure, a lower flange structure and a pin structure between the upper and lower flange structures, the upper and lower flange structures forming a gap around the pin structure, wherein the microstructure includes a patterned conductive via material through each insulating material layer for bridging consecutive conductive material layers at selected locations;
- and
- an optional bottom anchor layer for anchoring at least one of the microstructures to the IC-substrate,
- wherein at least a particular one of the microstructures includes a shell portion fully enclosing the particular one microstructure,
- wherein the shell portion comprises the conductive material plus the conductive via material,
- wherein the particular one microstructure includes a core portion within the shell portion, the core portion comprising insulating layer material,
- wherein the layers of conductive material and insulating material comprise CMOS complementary-symmetry metal oxide semiconductor) compatible material, and
- wherein the microstructure is usable as part of a sensing or actuation device via movement constrained by the gap.
A device patterned out of a multi-layer interconnect stack atop an Integrated Circuit (IC)-substrate, the multi-layer interconnect stack having:
- a plurality of microstructures, each microstructure comprising one or more layers of conductive material and insulating material, the microstructures including a least a constraining microstructure and a constrained microstructure movable relative to the constraining microstructure, the constrained microstructure having a plate structure with a hole, the constraining microstructure having an upper flange structure, a lower flange structure and a pin structure between the upper and lower flange structure through the hole, the upper and lower flange structures forming a gap around the pin structure, the plate structure interleaved with the upper and lower flange structures within the gap, wherein movement of the constrained microstructure is constrained by the constraining microstructure within the gap between the upper and lower flange structures, wherein at least one of the constraining and constrained microstructures includes a patterned conductive via material through each insulating material layer for bridging consecutive conductive material layers at selected locations;
- and
- an optional bottom anchor layer for anchoring at least one of the microstructures to the IC-substrate;
- wherein at least a particular one of the microstructures includes a shell portion fully enclosing the particular one microstructure,
- wherein the shell portion comprises the insulating layer material,
- wherein the particular one microstructure includes a core portion within the shell portion, the core portion comprising the conductive layer material plus conductive via material,
- wherein the layers of conductive material and insulating material comprise CMOS (complementary-symmetry metal oxide semiconductor) compatible material, and
- wherein the device is usable as part of a sensing or actuation device via the movement.
A multi-part constraining microstructure (MCMS) device patterned out of a multi-layer interconnect stack atop an Integrated Circuit (IC)-substrate, the multi-layer interconnect stack having:
- a plurality of microstructural parts, each part comprising one or more layers of conductive material and insulating material, the microstructural parts including a least a pair of constraining part and a constrained part movable relative to the constraining part, the constrained part having a plate structure with a hole, the constraining part having an upper flange structure, a lower flange structure and a pin structure between the upper and lower flange structures through the hole, the upper and lower flange structures forming a gap around the pin structure, the plate structure interleaved with the upper and lower flange structures within the gap, wherein movement of the constrained part is constrained by the constraining part within range inside the gap between the upper and lower flange structures, wherein at least one of the constraining and constrained parts includes a patterned conductive via material through each insulating material layer for bridging consecutive conductive material layers at selected locations;
- and
- an optional bottom anchor layer for anchoring at least one of the microstructural parts to the IC-substrate, wherein the layers of conductive material and insulating material comprise CMOS (complementary-symmetry metal oxide semiconductor) compatible material, and wherein the movement of the constrained part enables sensing or actuation capabilities for the MCMS device.
Dependencies are inferred from the claim text.