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US 8,552,460 B2Granted
Package for a light emitting element
AssigneeTSMC Solid State Lighting Ltd.
InventorsThomas Murphy, Andreas Hase, Matthias Heschel
Life of this patent
Estimating the term…
Abstract
A high-brightness LED module includes a substrate with a recess in which a light emitting element is mounted. The recess is defined by a sidewalls and a relatively thin membrane. At least two micro-vias are provided in the membrane and include conductive material that passes through the membrane. A p-contact of the light emitting element is coupled to a first micro-via and an n-contact of the light emitting element is coupled to a second micro-via.
Claims20
A high-brightness LED module comprising:
- a silicon substrate comprising a recess defined by sidewalls and a membrane, wherein at least two micro-vias are disposed in the membrane, the micro-vias comprising conductive material that passes through the membrane;
- and a light emitting element mounted to the membrane, wherein a p-contact of the light emitting element is coupled to a first micro-via and an n-contact of the light emitting element is coupled to a second micro-via.
A light emitting diode module comprising:
- a substrate having a recess defined by sidewalls of the substrate and a membrane portion of the substrate, wherein the membrane portion has a first surface that defines the recess and a second surface opposite the first surface;
- a light emitting element mounted within the recess to the first surface of the membrane portion, wherein the light emitting element has an n-contact and a p-contact;
- a plurality of conductive vias disposed in and extending through the membrane portion from the first surface to the second surface, wherein a portion of the plurality of conductive vias is coupled to the p-contact of the light emitting element and another portion of the plurality of conductive vias is coupled to the n-contact of the light emitting element;
- and
- a first under-bump metallization feature and a second under-bump metallization feature disposed at the second surface of the membrane portion, wherein the first under-bump metallization feature is coupled with the portion of the plurality of conductive vias and the second under-bump metallization feature is coupled with the another portion of the plurality of conductive vias.
2 more elements
Dependencies are inferred from the claim text.