Radiation-emitting component and method for its manufacture
AssigneeOSRAM Opto Semiconductors GmbH
InventorsSiegfried Herrmann, Sebastian Taeger
Life of this patent
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Abstract
A radiation-emitting component includes a carrier, a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip includes an active layer to generate electromagnetic radiation and a radiation exit surface, a first and a second contact structure for the electrical contacting of the semi-conductor chip, a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first contact layer and to the second contact structure via the second contact layer, a passivation layer arranged on the semi-conductor chip.
Claims16
A radiation-emitting component comprising:
- a carrier,
- a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip has an active layer to generate electromagnetic radiation, and a radiation exit surface,
- a first and a second contact structure that electrically contacts the semi-conductor chip,
- a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first contact layer and to the second contact structure via the second contact layer,
- a passivation layer arranged on the semi-conductor chip, wherein the passivation layer comprises an organic polymer, with the general formula (I):
- wherein R1 to R16 are in each case independent from one another, may be H, CH3, F, Cl or Br, and n has a value from 10 to 500,000.
A method for manufacturing a radiation-emitting component comprising:
- A) providing a carrier which comprises a first and a second contact structure,
- B) mechanically and electrically conductive connecting a semi-conductor chip to the first contact structure via a first contact layer,
- C) mechanically and electrically conductive connecting the semi-conductor chip to the second contact structure via a second contact layer,
- D) applying a passivation layer on at least sections of the semi-conductor chip,
- wherein the passivation layer comprises an organic polymer with the general formula (I):
- wherein R1 to R16 are in each case independent from one another, may be H, CH3, F, Cl or Br, and n has a value from 10 to 500,000.
Dependencies are inferred from the claim text.