Semiconductor light-emitting diode and a production method therefor

A method of manufacturing a semiconductor light emitting diode, comprising:

• forming a semiconductor layer;
• forming a nanodot layer on an N-face of the semiconductor layer;
• and
• forming an ohmic electrode comprising a contact layer, a reflective layer, an anti-diffusion layer, and a capping layer on the nanodot layer,
• wherein the nanodot layer comprises at least one of Ag, Al and Au, the contact layer comprises at least one material selected from among Ti, Ti—Al alloys, Ti—Ni alloys, Ta, Al, W, and W—Ti alloys, the anti-diffusion layer comprises at least one metal layer selected from among Cr, Ru, Pt, Ni, Pd, Ir, Rh, and Nb layers, or at least one oxide layer selected from among RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx, and CrOx layers, and the capping layer comprises at least one of Au and Al.

A semiconductor light emitting diode comprising:

• a semiconductor layer;
• and
• an ohmic electrode comprising a nanodot layer, a contact layer, a reflective layer, an anti-diffusion layer, and a capping layer disposed on the semiconductor layer,
• wherein the nanodot layer is disposed on an N-face of the semiconductor layer and comprises at least one of Ag, Al and Au,
• the contact layer comprises at least one material selected from among Ni, Ni—Ti alloys, Ni—Al alloys, Ti—Al alloys, Mg—Al alloys, Ta, Ti, W, and W—Ti alloys,
• the reflective layer comprises at least one material selected from among Al, Ag, Ag—Al alloys, Ag—Cu alloys, Ag—In alloys, Ag—Mg alloys, Al—Cu alloys, Al—In alloys, and Al—Mg alloys,
• the anti-diffusion layer comprises at least one metal layer selected from among Ti, Cr, Ru, Pt, Ni, Pd, Ir, Rh, Nb, W and W—Ti alloy layers, or at least one oxide layer selected from among RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx and CrOx layers, and
• the capping layer comprises at least one of Au and Al.

A method of manufacturing a semiconductor light emitting diode, comprising:

• forming a semiconductor layer;
• forming a nanodot layer on an N-face of the semiconductor layer;
• and
• forming an ohmic electrode comprising a contact layer, a reflective layer, an anti-diffusion layer, and a capping layer on the nanodot layer,
• wherein the nanodot layer comprises at least one of Ag, Al and Au, the contact layer comprises at least one material selected from among Ni, Ni—Ti alloys, Ni—Al alloys, Ti—Al alloys, Mg—Al alloys, Ta, Ti, W and W—Ti alloys, the reflective layer comprises at least one material selected from among Al, Ag, Ag—Al alloys, Ag—Cu alloys, Ag—In alloys, Ag—Mg alloys, Al—Cu alloys, Al—In alloys, and Al—Mg alloys, the anti-diffusion layer comprises at least one metal layer selected from among Ti, Cr, Ru, Pt, Ni, Pd, Ir, Rh, Nb, W and W—Ti alloy layers, or at least one oxide layer selected from among RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx and CrOx layers, and the capping layer comprises at least one of Au and Al.