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US 8,552,451 B2Granted
Light-emitting diode with increased light extraction
AssigneeSemiLEDS Optoelectronics Co., Ltd.
InventorsChuong Anh Tran, Trung Tri Doan
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Abstract
Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
Claims17
A light-emitting diode (LED) device comprising:
- a p-doped layer;
- an active layer on the p-doped layer configured to emit light;
- an n-doped layer on the active layer;
- and
- a light extracting element on the n-doped layer comprising a plurality of balls in an electrically conductive transparent coating and the n-doped layer is in direct contact with the coating;
- the balls having a density in the coating selected to provide a plurality of empty regions and a spatially varying index of refraction, the light extracting element configured to scatter some of the light emitted by the active layer while the empty regions reflect some of the light emitted by the active layer.
3 more elements
A light-emitting diode (LED) device comprising:
- a p-doped layer;
- an active layer on the p-doped layer configured to emit light;
- an n-doped layer disposed above on the active layer having a surface;
- and
- a light extracting element on the surface configured to effectively roughen the n-doped layer, the light extracting element comprising a plurality of balls in an electrically conductive transparent coating and the n-doped layer is in direct contact with the coating;
- the balls having a density in the coating selected to provide a plurality of empty regions, the light extracting element having a spatially varying index of refraction with the balls configured to scatter some of the light emitted by the active layer while the empty regions reflect some of the light emitted by the active layer.
3 more elements
Dependencies are inferred from the claim text.