Semiconductor light emitting device and method for manufacturing the same
AssigneeNichia Corporation
InventorsYohei Wakai, Hiroaki Matsumura, Kenji Oka
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AssigneeNichia Corporation
InventorsYohei Wakai, Hiroaki Matsumura, Kenji Oka
Estimating the term…
A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting device 1 is provided with an n-electrode 50, which is arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack 40 is mounted on a substrate 10. A plurality of convexes are arranged on a first convex region 80 and a second convex region 90 on the light extraction surface. The second convex region 90 adjoins to the interface between the n-electrode 50 and the semiconductor stack 40, between the first convex region 80 and the n-electrode 50. The base end of the first convex arranged in the first convex region 80 is positioned closer to alight emitting layer 42 than the interface between the n-electrode 50 and the semiconductor stack 40, and the base end of the second convex arranged in the second convex region 90 is positioned closer to the interface between the n-electrode 50 and the semiconductor stack 40 than the base end of the first convex.
A semiconductor light emitting device, comprising:
A method for fabricating a semiconductor light emitting device, comprising steps of:
Dependencies are inferred from the claim text.