AlGaInP light-emitting diode having vertical structure with transparent multilayered reflective films

Abstract

A method for manufacturing the AlGaInP LED having a vertical structure is provided, including: growing, epitaxially, a buffer layer, an n-type contact layer, an n-type textured layer, a confined layer, an active layer, a p-type confined layer and a p-type window layer in that order on a temporary substrate, to form a texturable epitaxial layer; forming a transparent conducting film with periodicity on the p-type window layer of the epitaxial layer, forming a regulated through-hole on the transparent conducting film, and filling the through-hole with a conducting material; forming a total-reflection metal layer on the transparent conducting film; bonding a permanent substrate with the texturable epitaxial layer via a bonding layer, and bring the total-reflection metal layer into contact with the bonding layer; removing the temporary substrate and the buffer layer; forming an n-type extension electrode on the exposed n-type contact layer; removing the n-type contact layer, and forming a pad on the n-type textured layer; and forming a p-type electrode on a back of the permanent substrate. The transparent multilayered film with periodicity provides a greater reflectivity difference and hence brings better results than the conventional reflector consisting of single-layered, or, non-periodic, transparent films; and light-emitting efficiency is enhanced.

Dependencies are inferred from the claim text.