Power semiconductor device

A power semiconductor device, which has a termination structure in which a field plate is provided on an insulating film filled in a first recessed region formed in a semiconductor substrate and includes a plurality of unit cells connected in parallel, comprising:

• a gate wiring region in which gate wiring electrically connected to each gate electrode of said plurality of unit cells is provided;
• and
• a gate pad region electrically connected to said gate wiring region,
• wherein:
• said gate wiring region is disposed on said insulating film filled in a second recessed region formed in said semiconductor substrate;
• a first impurity region and a second impurity region are provided under said first recessed region and said second recessed region, respectively;
• and
• said first impurity region and said second impurity region are each a p-type region having a lower impurity concentration than that of a p-type active region of said unit cell.