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US 8,552,425 B2Granted
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMitsuhiro Ichijo, Toshiya Endo, Kunihiko Suzuki
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMitsuhiro Ichijo, Toshiya Endo, Kunihiko Suzuki
Estimating the term…
An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.
From the US filing history. Foreign family members aren’t listed.
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…
Characterised by the electrodes: characterised by the shapes, relative sizes or dispositions of the gate electrodes
Characterised by the electrode materials: conductor-insulator-semiconductor electrodes
About 5 years of term left · ends 12 Oct 2031 (estimated)
1. Field of the Invention
The present invention relates to a semiconductor device using an oxide semiconductor and a manufacturing method thereof.
In this specification, the term semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and electrooptic devices, semiconductor circuits, and electronic devices are all semiconductor devices.
FIGS. 1A and 1B are a top view of a transistor and a cross-sectional view thereof.
FIGS. 2A and 2B each illustrate cluster models in which a gallium atom is at the center.
FIGS. 3A and 3B illustrate reaction formulae of reaction for abstracting a hydrogen atom, and an energy diagram.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following description and it is easily understood by those skilled in the art that the mode and details can be variously changed without departing from the scope and spirit of the present invention. Therefore, the invention should not be construed as being limited to the description of the embodiments below. In describing structures of the present invention with reference to the drawings, components common between different drawings maintain the same reference numerals. The same hatching pattern is applied to similar parts, and the similar parts are not especially denoted by reference numerals in some cases. In addition, an insulating layer is not illustrated in a top view for convenience in some cases. Note that the size, the layer thickness, or the region of each structure illustrated in each drawing might be exaggerated for clarity. Therefore, the present invention is not necessarily limited to such scales.
Note that, functions of a “source” and a “drain” might be interchanged in the case where the direction of a current flow is changed in circuit operation, for example. Therefore, the terms “source” and “drain” can be replaced with each other in this specification.
In this embodiment, a semiconductor device which is one embodiment of the present invention is described with reference to FIGS. 1A and 1B. Note that a transistor is given as an example of the semiconductor device for description in this embodiment.