Transistor structures and methods of fabrication thereof
AssigneeTechnion Research & Development Foundation Limited
InventorsNir Tessler, Moti Margalit, Oded Globerman, Roy Shenhar
Life of this patent
Estimating the term…
Abstract
An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.
Claims12
A transistor device comprising source electrode and drain electrodes in different electrically conductive layers, a channel layer structure between said electrically conductive layers, and a gate on insulator structure attached to one of the source or drain electrodes with the insulator separating between the gate electrode and said one of the source and drain electrodes, wherein:
- said one of the source and drain electrodes is patterned, the pattern being in the form of spaced-apart perforations, such that each perforation is surrounded by the electrode layer material thereby providing discontinuity of electric conductivity within the electrode layer;
- and
- material compositions of the source electrode layer and channel are selected so as to create a barrier to charge injection into the channel thereby suppressing direct injection of charge from the source electrode to the drain electrode.
A transistor device comprising a stack of layers comprising a gate electrode layer, an electric insulator on top of said gate electrode layer, a patterned electrode layer on top of said electric insulator, the patterned electrode being one of source and drain electrodes, a channel layer structure above said patterned electrode layer, and a layer of other one of the drain and source electrodes on top of the channel layer structure, wherein:
- a pattern in said patterned electrode is in the form of spaced-apart perforations, each perforation being surrounded by the respective electrode layer material thereby providing discontinuity of electric conductivity within the electrode layer;
- and
- material composition of the source electrode layer is selected in accordance with an energy band of the channel layer structure so as to create a barrier to charge injection into the channel thereby suppressing direct injection of charge from the source electrode to the drain electrode, lowering the injection barrier by a voltage on the gate electrode enabling to fill charge carriers in said perforation.
Dependencies are inferred from the claim text.