Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a first layer, the first layer comprising a first fibrous body impregnated with a first organic resin;
• a semiconductor element over the first layer;
• a second layer over the semiconductor element, the second layer comprising a second fibrous body impregnated with a second organic resin;
• an antenna electrically connected to the semiconductor element;
• wherein the semiconductor element is sandwiched between the first layer and the second layer,
• wherein a thickness of a layer comprising the semiconductor element is greater than or equal to 1 μm and less than or equal to 10 μm,
• wherein a thickness of the first layer is greater than or equal to 10 μm and less than or equal to 100 μm, and
• wherein a thickness of the second layer is greater than or equal to 10 μm and less than or equal to 100 μm.

A semiconductor device comprising:

• a first layer, the first layer comprising a first fibrous body impregnated with a first organic resin;
• a semiconductor element over the first layer;
• a second layer over the semiconductor element, the second layer comprising a second fibrous body impregnated with a second organic resin;
• an antenna electrically connected to the semiconductor element;
• wherein the semiconductor element is sandwiched between the first layer and the second layer,
• wherein a thickness of a layer comprising the semiconductor element is greater than or equal to 1 μm and less than or equal to 10 μm,
• wherein a thickness of the first layer is greater than or equal to 10 μm and less than or equal to 100 μm,
• wherein a thickness of the second layer is greater than or equal to 10 μm and less than or equal to 100 μm,
• wherein the first fibrous body is woven fabric comprising a bundle of fibers for warp and a bundle of fibers for yarn, and
• wherein the second fibrous body is woven comprising a bundle of fibers for warp and a bundle of fibers for yarn.