Quantum dot light emitting diode device and display device therewith

A display device comprising:

• a transparent cathode formed on a substrate;
• an electron transport layer on the transparent cathode, wherein the electron transport layer has a cross linkable structure;
• a quantum dot light emitting layer formed on the electron transport layer to include quantum dots, wherein the quantum dot light emitting layer is formed by a solution process;
• a hole transport layer on the quantum dot light emitting layer;
• an anode formed on the hole transport layer;
• and
• a thin film transistor connected to the cathode.

A display device comprising:

• a cathode formed on a substrate;
• an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
• a quantum dot light emitting layer formed on the electron transport layer to include quantum dots, wherein the quantum dot light emitting layer is formed by a solution process;
• a hole transport layer on the quantum dot light emitting layer;
• a transparent anode formed on the hole transport layer;
• and
• a thin film transistor connected to the cathode.

A display device comprising:

• a cathode formed on a first substrate;
• an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
• a quantum dot light emitting layer formed on the electron transport layer to include quantum dots, wherein the quantum dot light emitting layer is formed by a solution process;
• a hole transport layer on the quantum dot light emitting layer;
• a transparent anode formed on the hole transport layer;
• a thin film transistor formed on the first substrate connected to the cathode;
• and
• a second substrate opposite to the first substrate, the second substrate having a color filter layer.

A method for fabricating a quantum dot light emitting diode device comprising the steps of:

• forming a cathode on a substrate, wherein the cathode is connected to a thin film transistor on the substrate;
• forming an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
• forming a quantum dot light emitting layer on the electron transport layer by a solution process;
• forming a hole transport layer on the quantum dot light emitting layer;
• and
• forming an anode on the hole transport layer.

A method for fabricating a display device comprising the steps of:

• forming a thin film transistor on a substrate;
• forming a cathode on the substrate, connected to the thin film transistor;
• forming an electron transport layer on the cathode, wherein the electron transport layer has a cross linkable structure;
• forming a quantum dot light emitting layer filled with a plurality of quantum dots on the electron transport layer by a solution process;
• forming a hole transport layer on the quantum dot light emitting layer;
• and
• forming an anode on the hole transport layer.