Nonvolatile memory device using a tunnel nitride as a current limiter element

A nonvolatile memory element, comprising:

• a first layer operable as an electrode;
• a second layer operable as an electrode;
• a third layer operable as a variable resistance layer disposed between the first layer and the second layer, the third layer comprising a metal oxide;
• a fourth layer operable as a current limiting layer disposed between the first layer and the third layer, the fourth layer comprising a tunnel nitride;
• a fifth layer disposed between the fourth layer and the third layer, the fifth layer operable to inhibit diffusion of oxygen ions between the third layer and the fourth layer;
• and
• a sixth layer and a seventh layer, wherein the fourth layer is disposed between the sixth layer and seventh layer, the sixth layer and the seventh layer operable to provide nitrogen ions to the fourth layer.

A method of forming a nonvolatile memory element, comprising:

• forming a first layer operable as a first electrode;
• forming a second layer operable as second electrode;
• forming a third layer operable as a variable resistance layer comprising a metal oxide, wherein the third layer is disposed between the first layer and the second layer;
• forming a fourth layer operable as current limiting layer, wherein the fourth layer is disposed between the first layer and the third layer;
• forming a fifth layer comprising an oxygen deficient material, wherein the fifth layer is disposed between the fourth layer and the third layer;
• forming a sixth layer comprising a nitrogen rich material operable to provide nitrogen ions to the fourth layer;
• forming a seventh layer comprising a nitrogen rich material operable to provide nitrogen ions to the fourth layer;
• wherein the fourth layer is disposed between the sixth layer and the seventh layer;
• and
• wherein the fifth layer comprises a material selected from the group of tantalum nitride, titanium nitride and tungsten nitride, silicon oxy-nitride, aluminum oxy-nitride, aluminum nitride, hafnium nitride zirconium nitride, gold, zirconium platinum and platinum beryllium.