Variable resistance memory device and method of forming the same

A variable resistance memory device, comprising:

• a substrate;
• a plurality of bottom electrodes on the substrate;
• a plurality of variable resistance lines provided on the bottom electrodes and extending in a first direction wherein the variable resistance lines are provided inside a trench exposing the bottom electrodes extending in the first direction;
• a top electrode provided on the variable resistance lines and extending in a second direction crossing the first direction;
• and
• a diffusion preventing pattern between the variable resistance lines and the top electrode.

A variable resistance memory device, comprising:

• a substrate;
• a plurality of bottom electrodes on the substrate;
• a first interlayer insulating layer including a trench formed therein, the trench exposing the bottom electrodes and extending in a first direction;
• a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction;
• and
• a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode,
• wherein the variable resistance patterns are an isolated type structure in which the variable resistance patterns are divided in the first direction and in the second direction.