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US 8,552,411 B2Granted
Manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTomonori Aoyama, Kiyotaka Miyano
Life of this patent
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Abstract
According to one embodiment, a manufacturing method of semiconductor device includes forming plural elements on a substrate, forming a silicon compound film so as to bury between a plurality of elements, and modifying the silicon compound film to a silicon dioxide film by radiating microwaves.
Claims16
A manufacturing method of a semiconductor device comprising:
- forming a plurality of elements on a substrate;
- forming and burying a silicon compound film between the plurality of elements;
- and
- radiating the silicon compound film with microwaves to produce a silicon dioxide film,
- wherein the microwaves are radiated to the silicon compound film under an atmosphere having a pressure at which no radical is generated by the microwaves.
2 more elements
Dependencies are inferred from the claim text.