Wafer temperature correction system for ion implantation device
AssigneeTexas Instruments Incorporated
InventorKazuhiro Kandatsu
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Abstract
To provide an ion implantation device capable of correcting the temperature of the wafer. The ion implantation device of the present invention has: an irradiation means that radiates ions; a retention means that includes a disk 112 that retains at least one wafer W; a thermopile 122 that detects, in a noncontact manner, temperature information for a wafer W retained on disk 112; a cooling medium supply unit that enables heat exchange for a wafer W retained on disk 112; and a control unit that calculates the surface temperature of a wafer W retained on disk 112 based on the temperature information detected by thermopile 122 and that determines whether the calculated surface temperature for the wafer is within a permissible temperature range.
Claims5
A method for correcting the temperature of a substrate in an ion implantation device,
- for which the temperature correction method includes steps wherein:
- a dummy silicon substrate on which is attached a thermo label for the purpose of monitoring the substrate surface temperature is retained by a retention member;
- the temperature information for the dummy silicon substrate is detected when ion implantation is performed on the dummy silicon substrate, and the substrate surface temperature is monitored based on the aforementioned thermo label;
- the relationship between the temperature information for the aforementioned dummy silicon substrate and the observed substrate surface temperature is recorded;
- next, the temperature information for an actual process silicon substrate is detected when ion implantation will be performed or is being performed on the process silicon substrate;
- the surface temperature of the process silicon substrate is calculated based on the detected temperature information and the aforementioned recorded relationship;
- and it is determined whether the calculated surface temperature is within a permissible temperature range.
Dependencies are inferred from the claim text.