Method for manufacturing solid-state image pickup device
AssigneeCanon Kabushiki Kaisha
InventorsKouhei Hashimoto, Masatsugu Itahashi
Life of this patent
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Abstract
A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in photoelectric conversion elements, forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion, and removing the metal film in the peripheral circuit portion and forming light-shielding films from the metal film in the photoelectric conversion elements.
Claims9
A method for manufacturing a solid-state image pickup device, the solid-state image pickup device including a pixel portion in which a plurality of pixels are arranged, and a peripheral circuit portion in the vicinity of the pixel portion and including a transistor, each of the plurality of pixels including a photoelectric conversion element and a transistor, the method comprising:
- forming gate electrodes of the transistors in the pixel portion and the peripheral circuit portion;
- forming a first insulating film in the pixel portion and the peripheral circuit portion;
- forming a second insulating film above the first insulating film in the pixel portion and the peripheral circuit portion;
- etching the second insulating film in the photoelectric conversion elements;
- forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion;
- and
- removing the metal film in the peripheral circuit portion, and forming light-shielding films from the metal film in the photoelectric conversion elements.
Dependencies are inferred from the claim text.