Semiconductor chip and radio frequency circuit
AssigneeMitsubishi Electric Corporation
InventorsTakuya Suzuki, Kenji Kawakami, Ko Kanaya, Yoichi Kitamura
Life of this patent
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Abstract
A two-terminal semiconductor device is formed on a semiconductor substrate. Two wiring patterns are respectively connected to terminals of the semiconductor device, and two electrode pads are respectively connected to the wiring patterns for connecting a signal input/output circuit formed on a separate substrate. Two parallel wiring patterns are respectively connected to the wiring patterns, and two reactance-circuit connection electrode pads are respectively connected to the parallel wiring patterns for electrically connecting a reactance circuit formed on the separate substrate separately from the signal input/output circuit.
Claims3
A semiconductor chip which is formed by a semiconductor substrate on which there are provided a two-terminal semiconductor device including a single diode or an anti-parallel diode pair composed of two diodes having opposite polarities connected in parallel, two wiring patterns that are respectively connected to terminals of the two-terminal semiconductor device and formed on a first-terminal side and a second-terminal side of the two-terminal semiconductor device, and two electrode pads respectively connected to the wiring patterns for connecting a signal input/output circuit that is formed on a different substrate provided separately from the semiconductor chip, wherein the semiconductor chip further comprises:
- two parallel wiring patterns that are respectively connected to the wiring patterns on terminal ends of the two-terminal semiconductor device and formed on a first-terminal side and a second-terminal side of the two-terminal semiconductor device;
- and
- two reactance-circuit connection electrode pads respectively connected to the parallel wiring patterns for respectively electrically connecting reactance circuits that are formed on the different substrate separately from the signal input/output circuit, wherein
- a length of a local-oscillator branching stub is set to a length with which a local-oscillator signal is short-circuited at a first terminal of the anti-parallel diode pair, and
- a length of a radio-frequency branching stub is set to a length with which a radio-frequency signal is short circuited at a second terminal of the anti-parallel diode pair.
A radio frequency circuit comprising:
- a semiconductor chip which is formed by a semiconductor substrate on which there are provided an anti-parallel diode pair composed of two diodes having opposite polarities connected in parallel, two wiring patterns that are respectively connected to terminals of the anti-parallel diode pair and formed on a first-terminal side and a second-terminal side of the anti-parallel diode pair, and two electrode pads respectively connected to the wiring patterns;
- and
- a signal input/output circuit that is formed on a separate substrate provided separately from the semiconductor chip, is electrically connected to the electrode pads, and includes a local-oscillator signal input circuit that inputs a local-oscillator signal to the anti-parallel diode pair, a radio-frequency signal input/output circuit that inputs and outputs a radio frequency signal with respect to the anti-parallel diode pair, and an intermediate-frequency signal input/output circuit that branches and inputs and outputs an intermediate-frequency signal generated from the local-oscillator signal and the radio-frequency signal, wherein
- the semiconductor chip includes
- two parallel wiring patterns including a first parallel wiring pattern and a second parallel wiring pattern formed on a first terminal side and a second terminal side of the anti-parallel diode pair, respectively connected to the wiring patterns on terminal ends of the anti-parallel diode pair, and
- two reactance-circuit connection electrode pads including a first reactance-circuit connection electrode pad and a second reactance-circuit connection electrode pad connected to the first parallel wiring pattern and the second parallel wiring pattern, respectively, for respectively electrically connecting reactance circuits that are formed on the separate substrate separately from the signal input/output circuit,
- the reactance circuit includes
- a local-oscillator branching stub that is connected to the first reactance-circuit connection electrode pad and enables a passage of the radio-frequency signal at the first terminal of the anti-parallel diode pair while short-circuiting the local-oscillator signal, and
- a radio-frequency branching stub that is connected to the second reactance-circuit connection electrode pad and enables a passage of the local-oscillator signal at the second terminal of the anti-parallel diode pair while short-circuiting the radio-frequency signal, and
- with the above configuration, the radio frequency circuit functions as an even harmonic mixer.
Dependencies are inferred from the claim text.