Semiconductor device

A semiconductor device comprising:

• basic blocks each comprising a logic circuit;
• and
• programming cells each configured to control connections between two of the basic blocks,
• wherein the programming cells each comprise a first transistor functioning as a switching element and a second transistor configured to control supply of a potential to a gate electrode of the first transistor, and
• wherein the second transistors each comprise a channel formation region comprising an oxide semiconductor.

A semiconductor device comprising:

• basic blocks each comprising a logic circuit;
• first programming cells each configured to control connections between two of the basic blocks;
• and
• second programming cells configured to control supply of a power supply potential to each of the basic blocks,
• wherein the first programming cells and the second programming cells each comprise a first transistor functioning as a switching element and a second transistor configured to control supply of a potential to a gate electrode of the first transistor, and
• wherein the second transistors each comprise a channel formation region comprising an oxide semiconductor.

A semiconductor device comprising:

• a first basic block and a second basic block, each comprising a logic circuit;
• and
• a circuit configured to control a connection between the first basic block and the second basic block,
• wherein the circuit comprises a first transistor functioning as a switching element and a second transistor configured to control supply of a potential to a gate electrode of the first transistor, and
• wherein the second transistor comprises a channel formation region comprising an oxide semiconductor.