# US 8,542,475 B2 · Self healing high energy glass capacitors > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,542,475 B2 - Document ID: US8542475B2 - Status: Granted - Kind: B2 - Application number: 12/900,976 - Filed: 2010-10-08 - Published: 2011-04-14 - Granted: 2013-09-24 - Earliest claimed: 2009-10-09 - Assignees: The Penn State Research Foundation - Applicants: Michael Lanagan; Carlo Pantano; Hoi Kwan Lee; Ramakrishnan Rajagopalan; Nicholas Smith - Inventors: Michael Lanagan; Carlo Pantano; Hoi Kwan Lee; Ramakrishnan Rajagopalan; Nicholas Smith - Web page: https://patentgrep.com/patent/US8542475B2 ## CPC - H01G 4/105: {Glass dielectric} - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) ## Abstract A self healing high energy glass capacitor is provided. The capacitor can have a glass layer with a top surface and a bottom surface. A top sacrificial layer can extend across the top surface and a bottom sacrificial layer can extend across the bottom surface. In addition, a top electrode can extend across the top sacrificial layer and a bottom electrode can extend across the bottom sacrificial layer. In some instances the glass capacitor has an energy breakdown of at least 6 joules per cubic centimeter. ## Claims ### Claim 1 A self healing high energy glass capacitor comprising: an alkali-free glass layer having a top surface and a bottom surface; a top sacrificial layer extending across and in contact with said top surface; a bottom sacrificial layer extending across and in contact with said bottom surface; a top electrode extending across said top sacrificial layer; a bottom electrode extending across said bottom sacrificial layer; and upon energy breakdown of said alkali-free glass layer at least one of said top sacrificial layer and said bottom sacrificial layer have a self healing property selected from the group consisting of selective ablation to promote self healing of said alkali-free glass layer, redox reacting to promote self healing of said alkali-free glass layer, and exothermic reacting to enhancing evaporation or phase change of at least one of said top electrode and said bottom electrode to clear a region around a failure location/defect and aiding in electrode removal from said fault region; said glass capacitor has an energy breakdown of at least 6 joules per cubic centimeter. ### Claim 2 (depends on 1) The high energy glass capacitor of claim 1, wherein said glass layer has a thickness of between 1 and 100 microns, inclusive. ### Claim 3 (depends on 1) The high energy glass capacitor of claim 1, wherein said top sacrificial layer and said bottom sacrificial layer has a thickness of between 10 nanometers and 5 microns, inclusive. ### Claim 4 (depends on 3) The high energy glass capacitor of claim 3, wherein said top sacrificial layer and/or said bottom sacrificial layer is an inorganic compound. ### Claim 5 (depends on 4) The high energy glass capacitor of claim 4, wherein said inorganic compound is selected from a group consisting of a metal oxide, a metal nitride, metal nitride/oxynitride, carbide, carbide/oxynitride and combinations thereof. ### Claim 6 (depends on 3) The high energy glass capacitor of claim 3, wherein said top sacrificial layer and/or said bottom sacrificial layer is a carbonaceous and/or graphitic compound. ### Claim 7 (depends on 3) The high energy glass capacitor of claim 3, wherein said top sacrificial layer and/or said bottom sacrificial layer is a polymer. ### Claim 8 (depends on 1) The high energy glass capacitor of claim 1, further comprising an interfacial bond layer between said glass layer and said top sacrificial layer and/or said bottom sacrificial layer. ### Claim 9 (depends on 8) The high energy glass capacitor of claim 8, wherein said interfacial bond layer contains a polar molecule. ### Claim 10 (depends on 9) The high energy glass capacitor of claim 9, wherein said polar molecule is selected from a group consisting of a high polar molecule and a low polar molecule. ### Claim 11 (depends on 9) The high energy glass capacitor of claim 9, wherein said polar molecule is selected from a group consisting of 3-aminopropyl-triethoxysilane (APTES) and heptadecafluoro-1,1,2,2-tetrahydrodecyltrimethoxysilane (HTDF). ### Claim 12 (depends on 8) The high energy glass capacitor of claim 8, wherein said interfacial bond layer is a polymer. ### Claim 13 (depends on 12) The high energy glass capacitor of claim 12, wherein said polymer is bonded to said glass layer using an interfacial silane coupling agent. ### Claim 14 (depends on 12) The high energy glass capacitor of claim 12, wherein said interfacial silane coupling agent is 3-mercapto-propyl-trimethoxy-silane (MPTMS). ### Claim 15 (depends on 1) The high energy glass capacitor of claim 1, wherein said top surface and/or said bottom surface of said alkali-free glass layer has a root mean square (RMS) surface roughness of less than 10 nm. ### Claim 16 (depends on 1) The high energy glass capacitor of claim 1, wherein said top surface and/or said bottom surface of said alkali-free glass layer has an RMS surface roughness of less than 6 nm. ### Claim 17 (depends on 1) The high energy glass capacitor of claim 1, wherein said top surface and/or said bottom surface of said alkali-free glass layer has an RMS surface roughness of less than 5 nm. ### Claim 18 (depends on 1) The high energy glass capacitor of claim 1, wherein said top surface and/or said bottom surface of said alkali-free glass layer has an RMS surface roughness of less than 4 mm.