# US 8,542,466 B2 · Magneto-resistance effect element, and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,542,466 B2 - Document ID: US8542466B2 - Status: Granted - Kind: B2 - Application number: 13/740,983 - Filed: 2013-01-14 - Published: 2013-05-23 - Granted: 2013-09-24 - Earliest claimed: 2007-03-30 - Assignees: Kabushiki Kaisha Toshiba; TDK Corporation - Applicants: Kabushiki Kaisha Toshiba; TDK Corporation - Inventors: Yoshihiko Fuji; Hideaki Fukuzawa; Hiromi Yuasa; Kunliang Zhang; Min Li; Michiko Hara; Yoshinari Kurosaki - Web page: https://patentgrep.com/patent/US8542466B2 ## CPC - G11B 5/3906: {Details related to the use of magnetic thin film layers or to their effects} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 25/00: Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance - G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)} - G11B 5/39: using magneto-resistive devices {or effects} - G11B 5/3909: {Arrangements using a magnetic tunnel junction} - H10N 50/10: Magnetoresistive devices - G11B 2005/3996: {large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices} - Y10S 977/943: Information storage or retrieval using nanostructure - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract A magneto-resistance effect element, including a fixed magnetization layer of which a magnetization is substantially fixed in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer, a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, a thin film layer, and a functional layer. ## Claims ### Claim 1 A magneto-resistance effect element, comprising: a bottom electrode; a first fixed magnetization layer formed on or above the bottom electrode, the first fixed magnetization layer having a magnetization substantially fixed in one direction; a magnetic coupling layer formed on the first fixed magnetization layer; a second fixed magnetization layer formed on the magnetic coupling layer, the second fixed magnetization layer having a magnetization substantially fixed in one direction; a free magnetization layer formed opposite to the second fixed magnetization layer, the free magnetization layer having a magnetization rotated in accordance with an external magnetic field; a spacer layer disposed between the second fixed magnetization layer and the free magnetization layer, the spacer layer including a current confining layer, the current confining layer having an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, the insulating layer including oxide, nitride or oxynitride; a functional layer formed in or on the second fixed magnetization layer, the functional layer containing at least one element selected from the group consisting of Si, Mg, B, and Al; and a top electrode formed on or above the free magnetization layer, the top electrode being configured to pass electric current in combination with the bottom electrode. ### Claim 2 (depends on 1) The magneto-resistance effect element as set forth in claim 1, wherein the functional layer contains Si. ### Claim 3 (depends on 1) The magneto-resistance effect element as set forth in claim 1, wherein a thickness of the functional layer is within 0.1 to 10 nm. ### Claim 4 (depends on 1) The magneto-resistance effect element as set forth in claim 1, wherein the spacer layer includes a metallic layer formed so as to be adjacent to the current confining layer and at least one of the second fixed magnetization layer and the free magnetization layer. ### Claim 5 (depends on 4) The magneto-resistance effect element as set forth in claim 4, wherein the metallic layer includes at least one element selected from the group consisting of Cu, Ag, and Au. ### Claim 6 (depends on 1) The magneto-resistance effect element as set forth in claim 1, wherein the conductor of the current confining layer mainly contains at least one element selected from the group consisting of Cu, Ag, and Au. ### Claim 7 (depends on 1) The magneto-resistance effect element as set forth in claim 1, wherein at least one of the second fixed magnetization layer and/or the free magnetization layer contains Fe. ### Claim 8 (depends on 7) The magneto-resistance effect element as set forth in claim 7, wherein an Fe composition in a region of the second fixed magnetization layer and/or the free magnetization layer remote from the spacer layer by 1 nm or less is set to 10% or more. ### Claim 9 (depends on 7) The magneto-resistance effect element as set forth in claim 7, wherein an Fe composition in a region of the second fixed magnetization layer and/or the free magnetization layer remote from the spacer layer by 1 nm or less is set to 40% or more. ### Claim 10 (depends on 1) A magnetic head, comprising a magneto-resistance effect element as set forth in claim 1. ### Claim 11 (depends on 10) A magnetic recording/reproducing device, comprising the magnetic head as set forth in claim 10 and a magnetic recording medium. ### Claim 12 (depends on 1) A magnetic memory, comprising a magneto-resistance effect element as set forth in claim 1. ### Claim 13 A magneto-resistance effect element, comprising: a bottom electrode; a first fixed magnetization layer formed on or above the bottom electrode, the first fixed magnetization layer having a magnetization substantially fixed in one direction; a magnetic coupling layer formed on the first fixed magnetization layer; a second fixed magnetization layer formed on the magnetic coupling layer, the second fixed magnetization layer having a magnetization substantially fixed in one direction; a spacer layer including a first metallic layer, a current confining layer, and a second metallic layer subsequently stacked therein on the second fixed magnetization layer, the first metallic layer containing at least one element selected from the group consisting of Cu, Ag, and Au, the current confining layer having an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, the insulating layer including oxide, nitride or oxynitride, the conductor containing at least one element selected from the group consisting of Cu, Al, and Au, the second metallic layer containing at least one element selected from the group consisting of Cu, Ag, and Au; a free magnetization layer formed on the spacer layer, the free magnetization layer having a magnetization rotated in accordance with an external magnetic field; a functional layer formed in or on the second fixed magnetization layer, the functional layer containing at least one element selected from the group consisting of Si, Mg, B, and Al; and a top electrode formed on or above the free magnetization layer, the top electrode being configured to pass electric current in combination with the bottom electrode, wherein an Fe composition in a region of the second fixed magnetization layer and/or the free magnetization layer remote from the spacer layer by 1 nm or less is set to 10% or more. ### Claim 14 (depends on 13) The magneto-resistance effect element as set forth in claim 13, wherein the Fe composition in the region of the second fixed magnetization layer and/or the free magnetization layer remote from the spacer layer by 1 nm or less is set to 40% or more. ### Claim 15 A magneto-resistance effect element, comprising: a bottom electrode; a first fixed magnetization layer formed on or above the bottom electrode, the first fixed magnetization having a magnetization substantially fixed in one direction; a magnetic coupling layer formed on the first fixed magnetization layer; a second fixed magnetization layer formed on the magnetic coupling layer, the second fixed magnetization layer having a magnetization substantially fixed in one direction; a free magnetization layer formed opposite to the second fixed magnetization layer, the free magnetization layer having a magnetization rotated in accordance with an external magnetic field; an insulating spacer layer disposed between the second fixed magnetization layer and the free magnetization layer, the insulating spacer layer passing a tunnel current therethrough; a functional layer formed in or on the second fixed magnetization layer, the functional layer containing at least one element selected from the group consisting of Si, Mg, B, and Al; and a top electrode formed on or above the free magnetization layer, the top electrode being configured to pass electric current in combination with the bottom electrode. ### Claim 16 (depends on 15) The magneto-resistance effect element as set forth in claim 15, wherein a thickness of the functional layer is within 0.1 to 10 nm. ### Claim 17 (depends on 16) The magneto-resistance effect element as set forth in claim 16, wherein at least one of the second fixed magnetization layer and/or the free magnetization layer contains Fe. ### Claim 18 (depends on 17) The magneto-resistance effect element as set forth in claim 17, wherein an Fe composition in a region of the second fixed magnetization layer and/or the free magnetization layer remote from the spacer layer by 1 nm or less is set to 10% or more. ### Claim 19 (depends on 17) The magneto-resistance effect element as set forth in claim 17, wherein an Fe composition in a region of the second fixed magnetization layer and/or the free magnetization layer remote from the spacer layer by 1 nm or less is set to 40% or more.