# US 8,542,058 B2 · Semiconductor device including body connected FETs

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- Number: US 8,542,058 B2
- Document ID: US8542058B2
- Status: Granted
- Kind: B2
- Application number: 12/983,352
- Filed: 2011-01-03
- Published: 2012-07-05
- Granted: 2013-09-24
- Earliest claimed: 2011-01-03
- Assignees: International Business Machines Corporation
- Applicants: Myung-Hee Na; Edward J. Nowak
- Inventors: Myung-Hee Na; Edward J. Nowak
- Web page: https://patentgrep.com/patent/US8542058B2

## CPC

- G01R 31/2601: {Apparatus or methods therefor (G01R31/2607, G01R31/2642 take precedence)}
- G01R 31/2621: {for testing field effect transistors, i.e. FET's}
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)

## Abstract

A semiconductor device includes: a first field-effect transistor (FET); and a second FET of similar polarity to the first FET, wherein a body of the first FET is electrically coupled to a body of the second FET, and a source of the first FET is electrically coupled to a source of the second FET, such that a body voltage of the second FET controls a body voltage of the first FET.

## Claims

### Claim 1

A semiconductor device comprising:
a first field-effect transistor (FET);
a plurality of FETs connected in parallel, each of the plurality of FETs is of similar polarity to the first FET, wherein a body of each of the plurality of FETs is electrically coupled to each other along a first connection, each gate of the plurality of FETs is electrically coupled to each other along a second connection, each source of the plurality of FETs is electrically coupled to each other along a third connection, each drain of the plurality of FETs is electrically coupled to each other along a fourth connection, the first connection, the second connection, the third connection and the fourth connection are separate and distinct from each other; and
an operational amplifier electrically connecting the body of each of the plurality of FETs to the body of the first FET, the operational amplifier including a first input, a second input and an output connected to the body of the first FET, the first input coupled to the body of each of the plurality of FETs along the first connection and the second input coupled to the output.