# US 8,542,000 B1 · Curvature compensated band-gap design

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- Number: US 8,542,000 B1
- Document ID: US8542000B1
- Status: Granted
- Kind: B1
- Application number: 13/673,201
- Filed: 2012-11-09
- Published: 2013-09-19
- Granted: 2013-09-24
- Earliest claimed: 2012-03-19
- Assignees: SanDisk Technologies LLC
- Applicants: SanDisk Technologies Inc.
- Inventors: Behdad Youssefi
- Web page: https://patentgrep.com/patent/US8542000B1

## CPC

- G05F 3/30: Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence)
- G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES

## Abstract

A bandgap reference circuit is compensated for temperature dependent curvature in its output. A voltage across a diode with a fixed current is subtracted from a voltage across a diode with a proportional to absolute temperature (PTAT) current. The resultant voltage is then magnified and added to a PTAT voltage and a diode's voltage that has a complementary-to-absolute temperature (CTAT) characteristic, resulting in a curvature corrected bandgap voltage.

## Claims

### Claim 1

A circuit for providing a reference voltage, comprising:
a first diode connected between a proportional to absolute temperature current source and ground;
a first resistance connected between the first diode and the proportional to absolute temperature current source;
a first opamp having a first input connected to a node between the first resistance and the first diode, an output connected to the gate of a first transistor connected between a high voltage level and ground, wherein the first transistor is connected to ground though a second resistance and the second input of the first opamp is connect to a node between the first transistor and the second resistance;
a second diode connected between ground and the high voltage level, wherein the second diode is connected to the voltage level by a first and a second leg, wherein:
the first leg includes a second transistor whose gate is connected to receive the output of the first opamp; and
the second leg includes a third transistor connected in series with a resistive voltage divider, where the resistive voltage divider is connected between the second diode and the third transistor; and
a second opamp having an output connected to the gate of the third transistor, a first input connected to a node between the proportional to absolute temperature current source and the first resistance, and a second input connected to a node of the resistive voltage divider,
wherein the reference voltage is provided from a node between the third transistor and the resistive voltage divider.

### Claim 2 (depends on 1)

The circuit of claim 1, wherein the second diode is sized larger than the first diode.

### Claim 3 (depends on 2)

The circuit of claim 2, wherein the ratio of sizes of the second diode to the first diode is approximately ten.

### Claim 4 (depends on 1)

The circuit of claim 1, wherein the proportional to absolute temperature current source includes:
a fourth transistor connected between the first resistance and the high voltage level;
a fifth transistor connected between the high voltage level and a third resistor, and a third diode connected between the third resistor and ground; and
a third opamp having a first input connected to a node between the fifth transistor and the third resistor, and second input connected to the node between the first diode and the first resistance, and having an output connected to the gates of the fourth and fifth transistors.

### Claim 5 (depends on 4)

The circuit of claim 4, wherein the third diode is sized the same as the second diode.