# US 8,541,944 B2 · Display apparatus using oxide semiconductor and production thereof

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- Number: US 8,541,944 B2
- Document ID: US8541944B2
- Status: Granted
- Kind: B2
- Application number: 13/417,483
- Filed: 2012-03-12
- Published: 2012-07-05
- Granted: 2013-09-24
- Earliest claimed: 2006-12-05
- Assignees: Canon Kabushiki Kaisha
- Applicants: Masafumi Sano; Kenji Takahashi
- Inventors: Masafumi Sano; Kenji Takahashi
- Web page: https://patentgrep.com/patent/US8541944B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A transistor includes a source terminal and a drain terminal, an active layer having an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. The gate insulating layer contains hydrogen in an amount of less than 3×1021 atoms/cm3, and an electron carrier concentration of the active layer is less than 1018/cm3.

## Claims

### Claim 1

A transistor comprising:
an active layer comprising an oxide containing In;
a source electrode and a drain electrode electrically connected to the active layer;
a gate insulating layer in contact with a first side of the active layer;
a gate electrode, with the gate insulating layer being disposed between the gate electrode and the active layer; and
an insulating layer, with the insulating layer being in contact with a second side of the active layer opposite to the first side on which the active layer is in contact with the gate insulating layer,
wherein the gate insulating layer and the insulating layer contain hydrogen in an amount of less than 3×1021 atoms/cm3, and
an electron carrier concentration of the active layer is less than 1018/cm3.

### Claim 2 (depends on 1)

The transistor according to claim 1, wherein the gate insulating layer is disposed between the active layer and a first insulating layer having a higher hydrogen content than the hydrogen content of the gate insulating layer.

### Claim 3 (depends on 2)

The transistor according to claim 2, wherein the first insulating layer comprises at least one selected from a group consisting of silicon oxide, silicon nitride, and silicon nitride oxide.

### Claim 4 (depends on 1)

The transistor according to claim 1,
wherein the active layer comprises a first portion and a second portion,
wherein the second portion is in contact with the source electrode and the drain electrode, and
wherein the first portion is in contact with the insulating layer.

### Claim 5 (depends on 1)

The transistor according to claim 1, wherein the gate insulating layer comprises at least one selected from a group consisting of aluminum oxide, yttrium oxide, hafnium oxide, silicon oxide, and silicon nitride.

### Claim 6 (depends on 1)

The transistor according to claim 1, wherein the active layer further contains Zn and Ga.

### Claim 7

A display apparatus comprising:
a plurality of pixels, with each pixel comprising:
a display element;
a transistor for driving the display element, with the transistor comprising:
an active layer comprising an oxide containing In;
a source electrode and a drain electrode electrically connected to the active layer;
a gate electrode overlapped with a channel portion of the active layer;
a first insulating layer in contact with a first side of the active layer and disposed between the gate electrode and the active layer, and
an insulating layer, with the insulating layer being in contact with a second side of the active layer on a side opposite the first side on which the active layer is in contact with the first insulating layer,
wherein the first insulating layer and the insulating layer each contain hydrogen in an amount of less than 3×1021 atoms/cm3, and
wherein an electron carrier concentration of the active layer is less than 1018/cm3.

### Claim 8 (depends on 7)

The display apparatus according to claim 7, wherein the first insulating layer is disposed between the active layer and a second insulating layer having a higher hydrogen content than the hydrogen content of the first insulating layer.

### Claim 9 (depends on 8)

The display apparatus according to claim 8, wherein the second insulating layer comprises at least one selected from a group consisting of silicon oxide, silicon nitride, and silicon nitride oxide.

### Claim 10 (depends on 7)

The display apparatus according to claim 7, wherein the first insulating layer is a gate insulating layer, and wherein the gate insulating layer is between the active layer and the gate electrode.

### Claim 11 (depends on 10)

The display apparatus according to claim 10, wherein the gate insulating layer comprises at least one selected from a group consisting of aluminum oxide, yttrium oxide, hafnium oxide, silicon oxide, and silicon nitride.

### Claim 12 (depends on 10)

The display apparatus according to claim 10,
wherein the active layer comprises a first portion and a second portion,
wherein the second portion is in contact with the source electrode and the drain electrode, and
wherein the first portion is in contact with the insulating layer.

### Claim 13 (depends on 7)

The display apparatus according to claim 7, wherein the active layer further contains Zn and Ga.

### Claim 14 (depends on 7)

The display apparatus according to claim 7, wherein the display apparatus is an organic EL display.

### Claim 15 (depends on 1)

The transistor according to claim 1, wherein an electron mobility of the active layer is 1 cm2/(V·sec) or more.

### Claim 16 (depends on 7)

The display apparatus according to claim 7, wherein an electron mobility of the active layer is 1 cm2/(V·sec) or more.