# US 8,541,882 B2 · Stacked IC device with recessed conductive layers adjacent to interlevel conductors

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- Number: US 8,541,882 B2
- Document ID: US8541882B2
- Status: Granted
- Kind: B2
- Application number: 13/240,058
- Filed: 2011-09-22
- Published: 2013-03-28
- Granted: 2013-09-24
- Earliest claimed: 2011-09-22
- Assignees: Macronix International Co., Ltd.
- Applicants: Shih-Hung Chen; Yan-Ru Chen; Lo-Yueh Lin
- Inventors: Shih-Hung Chen; Yan-Ru Chen; Lo-Yueh Lin
- Web page: https://patentgrep.com/patent/US8541882B2

## CPC

- G11C 5/04: Supports for storage elements {, e.g. memory modules}; Mounting or fixing of storage elements on such supports
- G11C 5/06: Arrangements for interconnecting storage elements electrically, e.g. by wiring
- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 41/50: characterised by the boundary region between the core region and the peripheral circuit region
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions
- H10W 20/076: {in via holes or trenches}
- H10W 20/083: {the openings being via holes penetrating underlying conductors}
- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10D 88/00: Three-dimensional [3D] integrated devices
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An IC device comprises a stack of contact levels, each including conductive layer and an insulation layer. A dielectric liner surrounds an interlevel conductor within an opening in the stack of contact levels. The opening passes through a portion of the stack of contact levels. The interlevel conductor is electrically insulated from the conductive layers of each of the contact levels through the dielectric liner. A portion of the conductive layer at the opening is recessed relative to adjacent insulation layers. The dielectric liner may have portions extending between adjacent insulation layers.

## Claims

### Claim 1

An IC device comprising:
a stack of contact levels, each contact level comprising a conductive layer and an insulation layer;
first and second interlevel conductors within respective first and second openings in the stack of contact levels, the first opening passing through n contact levels of the stack of contact levels, the second opening passing through n+1 contact levels of the stack of contact levels, n being an integer equal to at least 1;
the first interlevel conductor being electrically insulated from the conductive layers of the n contact levels, the second interlevel conductor being electrically insulated from the conductive layers of the n+1 contact levels;
the first interlevel conductor terminating at and in electrical contact with conductive layer n+1, the second interlevel conductor terminating at and in electrical contact with conductive layer n+2; and
portions of conductive layers at the first and second openings being separated from the interlevel conductors by respective recesses having insulating material therein.

### Claim 2 (depends on 1)

The IC device according to claim 1, further comprising:
an electrically insulating layer over the stack of contact levels; and
first and second interlevel conductor extensions passing through the electrically insulating layer and making electrical contact with the first and second interlevel conductors.

### Claim 3 (depends on 2)

The IC device according to claim 2, further comprising:
first and second dielectric liners surrounding the first and second interlevel conductors within the first and second openings;
the first dielectric liner comprising a portion extending between adjacent insulation layers and around the first interlevel conductor;
the first interlevel conductor extension having a first lateral dimension at the first interlevel conductor; and
the portion of the first dielectric liner having a second lateral dimension, the second lateral dimension being larger than the first lateral dimension.

### Claim 4 (depends on 1)

The IC device according to claim 1, further comprising:
first and second dielectric liners surrounding the first and second interlevel conductors within the first and second openings; and
the dielectric liners comprising portions extending between adjacent insulation layers.

### Claim 5 (depends on 4)

The IC device according to claim 4, wherein the portions of the dielectric liner are generally annular.

### Claim 6 (depends on 1)

The IC device according to claim 1, wherein the recessed portions of the conductive layers are recessed at least 10 nm relative to the adjacent insulation layers.

### Claim 7

A three-dimensional stacked IC device comprising:
a stack of at least first, second, third and fourth contact levels;
each contact level comprising a conductive layer and an insulation layer;
first, second, third and fourth electrical conductors being within contact openings, the contact openings passing through portions of the stack of contact levels;
the first, second, third and fourth electrical conductors terminating at and in electrical contact with the first, second, third and fourth conductive layers, respectively;
the second electrical conductor is electrically isolated from the first conductive layer, the third electrical conductor is electrically isolated from the first and second conductive layers, and the fourth electrical conductor is electrically isolated from the first, second and third conductive layers; and
portions of the conductive layers at the conductive openings being recessed relative to the adjacent insulation layers with electrical insulation between said adjacent insulation layers to provide enhanced electrical insulation between opposed conductive layers and electrical conductors.

### Claim 8 (depends on 7)

The stacked IC device according to claim 7, further comprising:
an electrically insulating layer over the stack of contact levels; and
first, second, third and fourth electrical conductor extensions passing through the electrically insulating layer and making electrical contact with the first, second, third and fourth electrical conductors.

### Claim 9 (depends on 8)

The IC device according to claim 8, wherein:
the electrical conductor extensions have first lateral dimensions at the electrical conductors; and
the portions of the dielectric liners extend around the electrical conductors, the electrical insulation between adjacent insulation layers having second lateral dimensions, the second lateral dimensions being larger than the first lateral dimensions for at least some of the electrical conductor extensions.

### Claim 10 (depends on 7)

The stacked IC device according to claim 7, wherein the first, second, third and fourth electrical conductors directly physically contact the conductive layers of the first, second, third and fourth contact levels, respectively.

### Claim 11 (depends on 7)

The stacked IC device according to claim 7, wherein the electrical insulation between adjacent insulation layers are generally annular.

### Claim 12 (depends on 7)

The IC device according to claim 7, wherein the recessed portions of the conductive layers are recessed at least 10 nm relative to the adjacent insulation layers for at least some of the conductive layers.

### Claim 13 (depends on 1)

The IC device according to claim 1, further comprising:
a plug opening passing through at least some of the stack of contact levels; and
an interlevel plug within the plug opening in electrical contact with the conductive layers of said at least some of the stack of contact levels.

### Claim 14 (depends on 7)

The IC device according to claim 7, further comprising:
a plug opening passing through at least the first, second and third contact levels; and
an interlevel plug within the plug opening in electrical contact with the first, second, third and fourth conductive layers.

### Claim 15

An IC device comprising:
a stack of contact levels, each contact level comprising a conductive layer and an insulation layer;
first and second interlevel conductors within respective first and second openings in the stack of contact levels, the first opening passing through n contact levels of the stack of contact levels, the second opening passing through n+1 contact levels of the stack of contact levels, n being an integer equal to at least 1;
the first interlevel conductor terminating at and in electrical contact with conductive layer n+1, the second interlevel conductor terminating at and in electrical contact with conductive layer n+2; and
portions of conductive layers at the first and second openings being separated from the interlevel conductors by respective recesses having insulating material therein.