# US 8,541,869 B2 · Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates

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- Number: US 8,541,869 B2
- Document ID: US8541869B2
- Status: Granted
- Kind: B2
- Application number: 12/030,099
- Filed: 2008-02-12
- Published: 2008-08-14
- Granted: 2013-09-24
- Earliest claimed: 2007-02-12
- Assignees: The Regents of the University of California
- Applicants: Shuji Nakamura; James S. Speck; Steven P. DenBaars; Anurag Tyagi
- Inventors: Shuji Nakamura; James S. Speck; Steven P. DenBaars; Anurag Tyagi
- Web page: https://patentgrep.com/patent/US8541869B2

## CPC

- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H01S 5/22: having a ridge or stripe structure
- H01S 5/0202: {Cleaving}
- H01S 5/2201: {in a specific crystallographic orientation}
- H01S 5/3216: {quantum well or superlattice cladding layers}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A III-nitride edge-emitting laser diode is formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the III-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the III-nitride substrate, wherein the cleaved facets have an m-plane or a-plane orientation.

## Claims

### Claim 1

An optoelectronic device, comprising:
a III-nitride semiconductor light emitting device formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is a semipolar bulk III-nitride substrate and the III-nitride substrate is cleaved along a direction substantially perpendicular to the surface of the III-nitride substrate having the semipolar orientation, in order to create one or more cleaved facets, wherein the substrate has a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the substrate for the cleaved facets.

### Claim 2 (depends on 1)

The method of claim 1, wherein the III-nitride semiconductor light emitting device is an edge-emitting laser diode.

### Claim 3 (depends on 1)

The device of claim 1, wherein the semipolar bulk III-nitride substrate is a semipolar bulk gallium nitride substrate.

### Claim 4 (depends on 1)

The device of claim 1, wherein the cleaved facets have an m-plane or a-plane orientation.

### Claim 5 (depends on 1)

The device of claim 1, wherein the III-nitride substrate is thinned to facilitate cleaving.

### Claim 6

A process for fabricating an optoelectronic device, comprising:
forming a III-nitride semiconductor light emitting device on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is a semipolar bulk III-nitride substrate; and
cleaving the III-nitride substrate along a direction substantially perpendicular to the surface of the III-nitride substrate having the semipolar orientation, in order to create one or more cleaved facets;
wherein the cleaving step comprises creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the substrate, and then applying force along the cleavage line to create the cleaved facets.

### Claim 7 (depends on 6)

The method of claim 6, wherein the III-nitride semiconductor light emitting device is an edge-emitting laser diode.

### Claim 8 (depends on 6)

The method of claim 6, wherein the semipolar bulk III-nitride substrate is a semipolar bulk gallium nitride substrate.

### Claim 9 (depends on 6)

The method of claim 6, wherein the cleaved facets have an m-plane or a-plane orientation.

### Claim 10 (depends on 6)

The method of claim 6, further comprising thinning the III-nitride substrate to facilitate cleaving.