# US 8,541,864 B2 · Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture

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- Number: US 8,541,864 B2
- Document ID: US8541864B2
- Status: Granted
- Kind: B2
- Application number: 13/588,218
- Filed: 2012-08-17
- Published: 2012-12-13
- Granted: 2013-09-24
- Earliest claimed: 2011-01-18
- Assignees: International Business Machines Corporation
- Applicants: Joseph M. Lukaitis; Jed H. Rankin; Robert R. Robison; Dustin K. Slisher; Timothy D. Sullivan
- Inventors: Joseph M. Lukaitis; Jed H. Rankin; Robert R. Robison; Dustin K. Slisher; Timothy D. Sullivan
- Web page: https://patentgrep.com/patent/US8541864B2

## CPC

- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- H10D 1/47: Resistors having no potential barriers
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate, and forming at least one dielectric layer over the resistor. The method also includes forming a substrate contact through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate. The substrate contact comprises a high thermal conductivity material.

## Claims

### Claim 1

A semiconductor structure, comprising:
a resistor on an insulator layer over a substrate;
at least one dielectric layer over the resistor; and
a substrate contact extending through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate, wherein the substrate contact comprises a high thermal conductivity material.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the substrate contact comprises:
a core composed of the high thermal conductivity material; and
a liner between the core and the at least one dielectric layer, the resistor, and the insulator layer,
wherein the liner electrically insulates the core from the resistor.

### Claim 3 (depends on 2)

The structure of claim 2, wherein:
the insulator layer comprises at least one of a shallow trench isolation and a buried oxide layer; and
the liner has a thickness less than a thickness of the insulator between the resistor and the substrate.

### Claim 4 (depends on 1)

The structure of claim 1, wherein:
the substrate contact comprises a core composed of the high thermal conductivity material; and
a portion of the at least one dielectric layer is between the core and the resistor and electrically insulates the core from the resistor.

### Claim 5 (depends on 1)

The structure of claim 1, further comprising a dielectric material between the high thermal conductivity material and the resistor, wherein a thickness of the dielectric material is less than a thickness of the insulator layer between the resistor and the substrate.

### Claim 6 (depends on 1)

The structure of claim 1, wherein:
a portion of the at least one dielectric layer forms a collar around the high thermal conductivity material; and
the collar electrically insulates the high thermal conductivity material from the resistor.

### Claim 7 (depends on 1)

The structure of claim 1, further comprising:
first and second contacts at first and second ends of the resistor and extending through the at least one dielectric layer;
a metal layer comprising segments on the first and second contacts; and
wherein the substrate contact is electrically insulating from the metal layer.

### Claim 8 (depends on 1)

The structure of claim 1, further comprising a plurality of the substrate contacts through the resistor in a pattern based on predetermined hot-spots in the resistor.

### Claim 9 (depends on 1)

The structure of claim 1, wherein a size of the resistor and a size of the substrate contact are structured and arranged to achieve a predefined resistance value of the resistor.

### Claim 10 (depends on 1)

The structure of claim 1, wherein the at least one dielectric layer comprises:
a first dielectric layer comprising an oxide film and a nitride layer;
a second dielectric layer comprising nitride; and
a third dielectric layer comprising oxide.