# US 8,541,861 B2 · Infrared detection device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,861 B2 - Document ID: US8541861B2 - Status: Granted - Kind: B2 - Application number: 13/069,610 - Filed: 2011-03-23 - Published: 2012-03-15 - Granted: 2013-09-24 - Earliest claimed: 2010-09-13 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Masaki Atsuta; Hideyuki Funaki; Keita Sasaki - Inventors: Masaki Atsuta; Hideyuki Funaki; Keita Sasaki - Web page: https://patentgrep.com/patent/US8541861B2 ## CPC - G01J 5/10: using electric radiation detectors - G01J 5/0225: {Shape of the cavity itself or of elements contained in or suspended over the cavity} - G01J 5/023: {Particular leg structure or construction or shape; Nanotubes} - G01J 5/024: {Special manufacturing steps or sacrificial layers or layer structures} - G01J 5/05: Means for preventing contamination of the components of the optical system; Means for preventing obstruction of the radiation path - G01J 5/0831: Masks; Aperture plates; Spatial light modulators - G01J 5/0853: {having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid} - G01J 5/20: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) ## Abstract According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell. ## Claims ### Claim 1 An infrared detection device comprising a detection element, the detection element including: a semiconductor substrate provided with a cavity on a surface of the semiconductor substrate; a signal interconnect section provided in a region surrounding the cavity of the semiconductor substrate; a detection cell spaced from the semiconductor substrate above the cavity, including: a thermoelectric conversion layer; and an absorption layer laminated with the thermoelectric conversion layer, and provided with a plurality of holes penetrating the absorption layer to reach the cavity, a side surface of each of the holes being inclined to the surface of the semiconductor substrate, a first width of an upper surface portion of the absorption layer between two of the holes being wider than a second width of a lower surface portion of the absorption layer between the two of the holes, the first width and the second width being along a direction parallel to the surface of the semiconductor substrate; and a support section to hold the detection cell above the cavity and to connect the signal interconnect section and the detection cell. ### Claim 2 (depends on 1) The device according to claim 1, wherein a height of a top surface of the support section when viewed from the semiconductor substrate is lower than a height of a top surface of at least one of the signal interconnect section and the detection cell when viewed from the semiconductor substrate. ### Claim 3 (depends on 1) The device according to claim 1, wherein the first width is not more than 15 micrometers. ### Claim 4 (depends on 1) The device according to claim 1, wherein a taper angle between the side surface of the holes and the surface of the semiconductor substrate is not less than 45° and less than 90°. ### Claim 5 (depends on 1) The device according to claim 1, wherein the absorption layer is laminated over the thermoelectric conversion layer. ### Claim 6 (depends on 1) The device according to claim 1, wherein the absorption layer contains at least one of silicon dioxide and silicon nitride. ### Claim 7 (depends on 1) The device according to claim 1, wherein the thermoelectric conversion layer includes a p-n diode. ### Claim 8 (depends on 1) The device according to claim 1, wherein peripheries of the detection cell and the support section are in a reduced pressure atmosphere. ### Claim 9 (depends on 1) The device according to claim 1, wherein the semiconductor substrate includes a base, a buried insulating film provided on the base, and a semiconductor layer provided on the buried insulating film, and the absorption layer contains a material used for the buried insulating film. ### Claim 10 (depends on 1) The device according to claim 1, wherein the detection element is provided in a plurality, and the plurality of detection elements are disposed in a matrix. ### Claim 11 (depends on 1) The device according to claim 1, wherein a plane shape of the plurality of holes is a quadrangle. ### Claim 12 (depends on 1) The device according to claim 1, wherein a width of one of the plurality of holes is different from a width of another one of the plurality of holes. ### Claim 13 (depends on 1) The device according to claim 1, wherein the absorption layer absorbs infrared rays and converts the infrared rays into heat, and the thermoelectric conversion layer converts the heat converted by the absorption layer into an electrical signal.