# US 8,541,859 B2 · Semiconductor light receiving element and method for manufacturing the same

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- Number: US 8,541,859 B2
- Document ID: US8541859B2
- Status: Granted
- Kind: B2
- Application number: 13/307,791
- Filed: 2011-11-30
- Published: 2012-05-31
- Granted: 2013-09-24
- Earliest claimed: 2010-11-30
- Assignees: Sumitomo Electric Device Innovations, Inc.
- Applicants: Yuji Koyama
- Inventors: Yuji Koyama
- Web page: https://patentgrep.com/patent/US8541859B2

## CPC

- H10F 30/223: the potential barrier being a PIN barrier
- H10F 77/241: {comprising ring electrodes}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A semiconductor light receiving element includes a first semiconductor layer having a first conduction type, a second semiconductor layer that is provided on the first semiconductor layer and has a light receiving area, the second semiconductor layer having a second conduction type opposite to the first conduction type, an insulation film provided on the second semiconductor layer, and an electrode provided on the insulation film, the insulation film having a plurality of windows in an area in which the electrode overlaps the plurality of windows, the electrode being electrically connected to the second semiconductor layer via the plurality of windows.

## Claims

### Claim 1

A semiconductor light receiving element comprising:
a first semiconductor layer having a first conduction type;
a second semiconductor layer that is provided on the first semiconductor layer and has a light receiving area, the second semiconductor layer having a second conduction type opposite to the first conduction type;
an insulation film provided on the second semiconductor layer; and
an electrode provided on the insulation film,
the insulation film having a plurality of windows in an area in which the electrode overlaps the plurality of windows, the electrode being electrically connected to the second semiconductor layer via the plurality of windows.

### Claim 2 (depends on 1)

The semiconductor light receiving element according to claim 1, wherein the plurality of windows are arranged in a peripheral portion of the light receiving area and are not arranged in a center portion thereof.

### Claim 3 (depends on 1)

The semiconductor light receiving element according to claim 1, wherein the plurality of windows are arranged in a peripheral portion of the light receiving area and in a center portion thereof.

### Claim 4 (depends on 3)

The semiconductor light receiving element according to claim 3, wherein light is incident to the light receiving area through the first semiconductor layer.

### Claim 5 (depends on 1)

The semiconductor light receiving element according to claim 1, wherein the plurality of windows are spaced apart from each other at constant intervals.

### Claim 6 (depends on 1)

The semiconductor light receiving element according to claim 1, further comprising a contact layer between the second semiconductor layer and the insulation film.

### Claim 7 (depends on 6)

The semiconductor light receiving element according to claim 6, wherein the contact layer is made of InGaAs.

### Claim 8 (depends on 1)

The semiconductor light receiving element according to claim 1, wherein the semiconductor light receiving element has a flip-chip structure.

### Claim 9

A semiconductor light receiving element comprising:
a first semiconductor layer having a first conduction type;
a second semiconductor layer that is provided on the first semiconductor layer and has a light receiving area, the second semiconductor layer having a second conduction type opposite to the first conduction type;
an insulation film provided on the second semiconductor layer; and
an electrode provided on the insulation film,
the insulation film having a window in an area in which the electrode overlaps the window, the electrode being electrically connected to the second semiconductor layer in the window,
the window having a shape formed by removing a portion of a closed loop.

### Claim 10 (depends on 9)

The semiconductor light receiving element according to claim 9, further comprising a contact layer between the second semiconductor layer and the insulation film.

### Claim 11 (depends on 10)

The semiconductor light receiving element according to claim 10, wherein the contact layer is made of InGaAs.

### Claim 12 (depends on 9)

The semiconductor light receiving element according to claim 9, wherein the semiconductor light receiving element has a flip-chip structure.