# US 8,541,844 B2 · Semiconductor device and manufacturing method thereof

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- Number: US 8,541,844 B2
- Document ID: US8541844B2
- Status: Granted
- Kind: B2
- Application number: 13/172,398
- Filed: 2011-06-29
- Published: 2011-10-20
- Granted: 2013-09-24
- Earliest claimed: 1999-04-06
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Hidehito Kitakado; Ritsuko Kawasaki; Kenji Kasahara
- Inventors: Hidehito Kitakado; Ritsuko Kawasaki; Kenji Kasahara
- Web page: https://patentgrep.com/patent/US8541844B2

## CPC

- H10D 30/0316: {of lateral bottom-gate TFTs comprising only a single gate}
- G02F 1/13454: {Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence)}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6715: {characterised by the doping profiles, e.g. having lightly-doped source or drain extensions}
- H10D 30/6719: {having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/6723: {having light shields}
- H10D 30/6737: {characterised by the electrode materials}
- H10D 30/6743: {Silicon}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

## Claims

### Claim 1

A semiconductor device comprising:
at least a first n-channel thin film transistor being formed in a display region over a substrate;
at least a second n-channel thin film transistor and at least a p-channel thin film transistor in a drive circuit each being formed in a periphery of the display region over the substrate; and
a capacitor forming electrode formed adjacent to a portion of a crystalline semiconductor film to form a capacitor;
the first n-channel thin film transistor includes:
gate electrodes formed over the substrate,
a first insulating film formed over the gate electrodes,
a second insulating film comprising silicon oxide formed over the first insulating film,
the crystalline semiconductor film formed over the second insulating film,
wherein the first insulating film comprises silicon nitride,
wherein the first n-channel thin film transistor has first and second channel regions, and source and drain regions, and
wherein a channel length of the p-channel thin film transistor is shorter than that of the second n-channel thin film transistor.

### Claim 2 (depends on 1)

A device according to claim 1, wherein the crystalline semiconductor film of the second n-channel thin film transistor comprises a pair of LDD regions located between a channel region and source and drain regions respectively.

### Claim 3 (depends on 1)

A device according to claim 1, further comprising:
an interlayer insulating film formed over the crystalline semiconductor film of the first n-channel thin film transistor,
a wiring formed over the interlayer insulating film, the wiring connected to one of the source region or the drain region,
wherein the wiring overlaps one of the first channel region or second channel region.

### Claim 4 (depends on 1)

A device according to claim 1, wherein the gate electrodes comprise at least a material selected from the group consisting of tantalum, titanium, tungsten, molybdenum, and aluminum.

### Claim 5 (depends on 1)

A device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle-type display, a projector, a mobile book, a digital camera, a car navigation device, and a personal computer.

### Claim 6

A semiconductor device comprising:
at least a first n-channel thin film transistor being formed in a display region over a substrate;
at least a second n-channel thin film transistor and at least a p-channel thin film transistor in a drive circuit each being formed in a periphery of the display region over the substrate; and
a capacitor forming electrode formed adjacent to a portion of a crystalline semiconductor film to form a capacitor;
the first n-channel thin film transistor includes:
gate electrodes formed over the substrate,
a first insulating film formed over the gate electrodes,
a second insulating film comprising silicon oxide nitride formed over the first insulating film,
the crystalline semiconductor film formed over the second insulating film,
wherein the first insulating film comprises silicon nitride,
wherein the first n-channel thin film transistor has first and second channel regions, and source and drain regions, and
wherein a channel length of the p-channel thin film transistor is shorter than that of the second n-channel thin film transistor.

### Claim 7 (depends on 1)

A device according to claim 1, wherein the crystalline semiconductor film of the second n-channel thin film transistor comprises a pair of LDD regions located between a channel region and source and drain regions respectively.

### Claim 8 (depends on 1)

A device according to claim 1, further comprising:
an interlayer insulating film formed over the crystalline semiconductor film of the first n-channel thin film transistor,
a wiring formed over the interlayer insulating film, the wiring connected to one of the source region or the drain region,
wherein the wiring overlaps one of the first channel region or second channel region.

### Claim 9 (depends on 1)

A device according to claim 1, wherein the gate electrodes comprise at least a material selected from the group consisting of tantalum, titanium, tungsten, molybdenum, and aluminum.

### Claim 10 (depends on 1)

A device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle-type display, a projector, a mobile book, a digital camera, a car navigation device, and a personal computer.