# US 8,541,840 B2 · Structure and method for semiconductor power devices

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- Number: US 8,541,840 B2
- Document ID: US8541840B2
- Status: Granted
- Kind: B2
- Application number: 13/028,054
- Filed: 2011-02-15
- Published: 2011-06-09
- Granted: 2013-09-24
- Earliest claimed: 2008-04-24
- Assignees: Fairchild Semiconductor Corporation
- Applicants: James Pan
- Inventors: James Pan
- Web page: https://patentgrep.com/patent/US8541840B2

## CPC

- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- H10D 30/6717: {the source and the drain regions being asymmetrical}
- H10D 62/378: {Contact regions to the substrate regions}
- H10D 64/254: {for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts}
- H10D 84/0109: {the at least one component covered by H10D12/00 or H10D30/00 being a MOS device}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/401: {Combinations of FETs or IGBTs with BJTs}
- H10D 84/403: {Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors}
- H10D 86/01: Manufacture or treatment
- H10W 20/021: {of interconnections within wafers or substrates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a semiconductor-on-insulator region on a substrate. The semiconductor-on-insulator region includes a first semiconductor region overlying a dielectric region. The device includes an MOS transistor and a bipolar transistor. The MOS transistor has a drain region, a body region, and a source region in the first semiconductor region. The MOS transistor also includes a gate. The device also includes a second semiconductor region overlying the substrate and adjacent to the drain region, and a third semiconductor region overlying the substrate and adjacent to the second semiconductor region. The bipolar transistor includes has the drain region of the MOS transistor as an emitter, the second semiconductor region as a base, and the third semiconductor region as a collector. Accordingly, the drain of the MOS transistor also functions as the emitter of the bipolar transistor. Additionally, the gate and the base are coupled by a resistive element.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type;
a dielectric layer disposed on the semiconductor substrate;
a first semiconductor region disposed on the dielectric layer;
an MOS transistor, including:
a source region of the first conductivity type disposed in the first semiconductor region;
a drain region of the first conductivity type disposed in the first semiconductor region, the drain region being configured to operate as an emitter of a bipolar transistor;
a body region of a second conductivity type disposed between the drain region and the source region in the first semiconductor region; and
a gate disposed on a surface portion of the body region, the surface portion of the body region including a channel region of the MOS transistor;
a second semiconductor region of the first conductivity type disposed on and in direct contact with the semiconductor substrate, the second semiconductor region being configured to operate as a collector of the bipolar transistor;
a third semiconductor region of the second conductivity type disposed on top of the second semiconductor region, the third semiconductor region being in contact with the drain region of the MOS transistor and configured to operate as a base of the bipolar transistor; and
a resistive element coupled between the gate and the third semiconductor region.

### Claim 2 (depends on 1)

The device of claim 1 further comprising a first electrode coupled to the source region, a second electrode coupled to the semiconductor substrate, and a third electrode coupled to the gate.

### Claim 3 (depends on 1)

The device of claim 1 further comprising a ground electrode coupled to the source region, a power electrode coupled to the semiconductor substrate, and an input electrode coupled to the gate.

### Claim 4 (depends on 1)

The device of claim 1 wherein an on-resistance of the semiconductor device is lower than an on-resistance of the MOS transistor of the semiconductor device.

### Claim 5 (depends on 1)

The device of claim 1 wherein the resistive element includes a resistor disposed on the semiconductor substrate.

### Claim 6 (depends on 1)

The device of claim 1 wherein the resistive element includes a doped semiconductor region disposed on the semiconductor substrate.

### Claim 7 (depends on 1)

The device of claim 1 wherein the first semiconductor region includes silicon.

### Claim 8 (depends on 1)

The device of claim 1 wherein the dielectric layer includes silicon oxide.

### Claim 9 (depends on 1)

The device of claim 1 wherein the second semiconductor region includes an epitaxial layer.

### Claim 10 (depends on 1)

The device of claim 1 wherein the MOS transistor includes an n-type LDMOS transistor and the bipolar transistor includes an NPN bipolar transistor.

### Claim 11 (depends on 1)

The device of claim 1 wherein the MOS transistor includes a p-type LDMOS and the bipolar transistor includes a PNP bipolar transistor.

### Claim 12 (depends on 1)

The device of claim 1 wherein the MOS transistor further includes a lightly doped drain region disposed between the drain region and the body region.

### Claim 13

A semiconductor device, comprising:
a semiconductor-on-insulator region disposed on a substrate, the semiconductor-on-insulator region including a first semiconductor region overlying disposed on a dielectric region;
an MOS transistor including:
a drain region, a body region, and a source region disposed in the first semiconductor region, and
a gate disposed on, at least, the body region;
a second semiconductor region disposed on the substrate and in contact with the drain region;
a third semiconductor region disposed on the substrate, the third semiconductor region being disposed below the second semiconductor region, in direct contact with the substrate and in contact with the second semiconductor region;
a bipolar transistor including the drain region as an emitter, the second semiconductor region as a base, and the third semiconductor region as a collector; and
a resistive element coupled between the gate and the base.

### Claim 14 (depends on 13)

The device of claim 13 wherein:
the source region is of a first conductivity type;
the drain region is of the first conductivity type;
the body region is of a second conductivity type and is disposed between the source region and the drain region, the second conductivity type being opposite the first conductivity type; and
the gate is disposed on a surface portion of the body region, the surface portion of the body region extending between the source region and the drain region to form a channel region of the MOS transistor.

### Claim 15 (depends on 14)

The device of claim 14 wherein the second semiconductor region is of the second conductivity type and the third semiconductor region is of the first conductivity type.

### Claim 16 (depends on 13)

The device of claim 13 wherein the MOS transistor includes an NMOS transistor and the bipolar transistor includes an NPN bipolar transistor.

### Claim 17 (depends on 13)

The device of claim 13 wherein the MOS transistor includes a PMOS transistor and the bipolar transistor includes a PNP bipolar transistor.

### Claim 18 (depends on 13)

The device of claim 13 wherein the first semiconductor region includes silicon.

### Claim 19 (depends on 13)

The device of claim 13 wherein the dielectric region includes silicon oxide.

### Claim 20 (depends on 13)

The device of claim 13 further comprising a first electrode coupled to the source region, a second electrode coupled to the substrate, and a third electrode coupled to the gate.

### Claim 21 (depends on 13)

The device of claim 13 further comprising a ground electrode coupled to the source region, a power electrode coupled to the substrate, and an input electrode coupled to the gate.

### Claim 22 (depends on 13)

The device of claim 13 wherein an on-resistance of the semiconductor device is lower than an on-resistance of the MOS transistor of the semiconductor device.