# US 8,541,833 B2 · Power transistor device vertical integration > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,833 B2 - Document ID: US8541833B2 - Status: Granted - Kind: B2 - Application number: 13/082,679 - Filed: 2011-04-08 - Published: 2012-10-11 - Granted: 2013-09-24 - Earliest claimed: 2011-04-08 - Assignees: Infineon Technologies Austria AG - Applicants: Hans-Joachim Schulze; Anton Mauder; Helmut Strack; Franz Hirler - Inventors: Hans-Joachim Schulze; Anton Mauder; Helmut Strack; Franz Hirler - Web page: https://patentgrep.com/patent/US8541833B2 ## CPC - H10D 84/016: {the components including vertical IGFETs} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 87/00: Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate - H10D 88/101: {comprising components on opposite major surfaces of semiconductor substrates} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor component includes a sequence of layers, the sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer. The semiconductor component also includes a plurality of devices at least partly formed in the first semiconductor layer. A first one of the plurality of devices is a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer. The first region of the first and second semiconductor layers are in electrical contact with one another through a first opening in the second insulator layer. ## Claims ### Claim 1 A semiconductor component, comprising: a sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer; and a plurality of devices at least partly formed in the first semiconductor layer, a first one of the plurality of devices being a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer, the first region of the first and second semiconductor layers being in electrical contact with one another through a first opening in the second insulator layer. ### Claim 2 (depends on 1) The semiconductor component of claim 1, further comprising a metallization layer disposed on the first insulator layer so that the first insulator layer is interposed between the metallization layer and the first semiconductor layer, wherein the metallization layer is in electrical contact with a plurality of regions of the first semiconductor layer including the first region through corresponding openings in the first insulator layer. ### Claim 3 (depends on 2) The semiconductor component of claim 2, wherein the first region of the first semiconductor layer forms at least a part of a drain of the power transistor. ### Claim 4 (depends on 1) The semiconductor component of claim 1, wherein another one of the plurality of devices is a diode having an anode and a cathode formed in a second region of the first semiconductor layer which is laterally spaced apart from the first region of the first semiconductor layer. ### Claim 5 (depends on 4) The semiconductor component of claim 4, wherein the anode is in electrical contact with the metallization layer and the cathode is in electrical contact with a second region of the second semiconductor layer through a second opening in the second insulator layer, the first and second regions of the second semiconductor layer being laterally insulated from one another. ### Claim 6 (depends on 5) The semiconductor component of claim 5, wherein the first region of the second semiconductor layer forms a drift zone of the power transistor and the second region of the second semiconductor layer forms a drift control zone operable to control a conducting channel in the drift zone. ### Claim 7 (depends on 2) The semiconductor component of claim 2, wherein another one of the plurality of devices is a level shifter having a gate formed in a second region of the first semiconductor layer laterally insulated from the first region of the first semiconductor layer, the gate of the level shifter being insulated from the metallization layer by the first insulator layer. ### Claim 8 (depends on 1) The semiconductor component of claim 1, wherein another one of the plurality of devices is an interconnect structure formed in a second region of the first semiconductor layer laterally insulated from the first region of the first semiconductor layer. ### Claim 9 (depends on 1) The semiconductor component of claim 1, wherein another one of the plurality of devices is a resistor formed in a second region of the first semiconductor layer which is laterally spaced apart from the first region of the first semiconductor layer. ### Claim 10 A semiconductor component, comprising: a sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer; a power transistor having a drain formed in a first region of the first semiconductor layer and a drift zone, body, source and gate formed in a first region of the second semiconductor layer, the drift zone being electrically connected to the drain through a first opening in the second insulator layer; and a diode having an anode and a cathode formed in a second region of the first semiconductor layer, the anode being electrically connected to the drain of the power transistor and the cathode being electrically connected to a second region of the second semiconductor layer through a second opening in the second insulator layer, the first and second regions of the second semiconductor layer being laterally insulated from one another. ### Claim 11 (depends on 10) The semiconductor component of claim 10, further comprising a metallization layer disposed on the first insulator layer so that the first insulator layer is interposed between the metallization layer and the first semiconductor layer, wherein the metallization layer is in electrical contact with the drain of the power transistor and the anode of the diode. ### Claim 12 (depends on 10) The semiconductor component of claim 10, wherein the first region of the second semiconductor layer forms a drift zone of the power transistor and the second region of the second semiconductor layer forms a drift control zone operable to control a conducting channel in the drift zone. ### Claim 13 (depends on 10) The semiconductor component of claim 10, further comprising a level shifter having a gate formed in a third region of the first semiconductor layer laterally insulated from the first and second regions of the first semiconductor layer, the gate of the level shifter being insulated from the metallization layer by the first insulator layer. ### Claim 14 (depends on 10) The semiconductor component of claim 10, further comprising an interconnect structure formed in a third region of the first semiconductor layer laterally insulated from the first and second regions of the first semiconductor layer.