# US 8,541,828 B2 · Methods for depositing high-K dielectrics

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- Number: US 8,541,828 B2
- Document ID: US8541828B2
- Status: Granted
- Kind: B2
- Application number: 13/668,488
- Filed: 2012-11-05
- Published: 2013-03-07
- Granted: 2013-09-24
- Earliest claimed: 2009-06-30
- Assignees: Intermolecular, Inc.
- Applicants: Intermolecular, Inc.
- Inventors: Imran Hashim; Edward L. Haywood; Sandra G. Malhotra; Xiangxin Rui; Sunil Shanker
- Web page: https://patentgrep.com/patent/US8541828B2

## CPC

- H10D 1/716: {having vertical extensions}
- C23C 16/02: Pretreatment of the material to be coated (C23C16/04 takes precedence)
- C23C 16/405: {of refractory metals or yttrium}
- H10D 1/042: {using deposition processes to form electrode extensions}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6514: {by exposure to a plasma}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69394: {the material containing titanium, e.g. TiO2}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer includes at least a portion of rutile titanium oxide.

## Claims

### Claim 1

A film stack comprising:
a first electrode formed on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, wherein an oxygen plasma treatment is applied to an exposed first electrode to reduce a contact angle of a surface of the first electrode;
a titanium oxide layer formed on the exposed first electrode using at least one of a chemical vapor deposition process or an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion of rutile titanium oxide; and
wherein the film stack is annealed using a rapid thermal oxidation (RTO) process of at least approximately 600° C.

### Claim 2 (depends on 1)

The film stack of claim 1, wherein applying the oxygen plasma treatment comprises using one of a high density plasma or an atmospheric plasma.

### Claim 3 (depends on 1)

The film stack of claim 1, wherein the titanium oxide layer has an X-Ray Diffraction peak associated with rutile titanium oxide.

### Claim 4 (depends on 1)

The film stack of claim 1, wherein the first electrode comprises platinum deposited using physical vapor deposition (PVD) with a pedestal temperature greater than 250° Celsius.

### Claim 5 (depends on 4)

The film stack of claim 4, further comprising depositing the first electrode using PVD with a working gas having an oxygen partial pressure of greater than 10 percent.

### Claim 6 (depends on 1)

The film stack of claim 1, wherein depositing the first electrode comprises depositing a platinum electrode having a [111] crystal orientation.

### Claim 7 (depends on 1)

The film stack of claim 1, further comprising a second electrode deposited over the titanium oxide layer to form a capacitor.

### Claim 8

A film stack comprising:
a platinum electrode deposited on a substrate using physical vapor deposition (PVD) with a pedestal temperature of greater than 250° C. and a working gas having an oxygen partial pressure of greater than 10 percent, wherein the electrode is treated using an oxygen plasma;
a titanium oxide layer deposited on the platinum electrode, wherein the titanium oxide layer is at least a portion rutile titanium oxide; and
wherein the titanium oxide layer is doped with at least one of yttrium oxide or aluminum oxide.

### Claim 9 (depends on 8)

The film stack of claim 8, further comprising annealing the film stack using a rapid thermal oxidation (RTO) process of at least approximately 600° C.

### Claim 10 (depends on 8)

The film stack of claim 8, further comprising:
a second electrode deposited over the metal oxide layer, wherein the second electrode is one of platinum or ruthenium to form a capacitor structure.

### Claim 11 (depends on 8)

The film stack of claim 8, wherein the treating comprises using one of a high density plasma and an atmospheric plasma.

### Claim 12 (depends on 8)

The film stack of claim 8, wherein the titanium oxide layer includes an X-ray diffraction peak associated with rutile titanium oxide.

### Claim 13 (depends on 8)

The film stack of claim 8, wherein the pedestal temperature is between 250° and 300° C.

### Claim 14 (depends on 8)

The film stack of claim 8, wherein the pedestal temperature is approximately 300° C.

### Claim 15 (depends on 8)

The film stack of claim 8, wherein the oxygen partial pressure is greater than 20 percent.

### Claim 16

A film stack comprising:
a platinum electrode deposited on a substrate using physical vapor deposition (PVD) with a pedestal temperature of greater than 250° C. and a working gas having an oxygen partial pressure of greater than 10 percent, wherein the electrode is treated using an oxygen plasma; and
a titanium oxide layer deposited on the platinum electrode, wherein the titanium oxide layer is at least a portion rutile titanium oxide; and
wherein the film stack is annealed using a rapid thermal oxidation (RTO) process of at least approximately 600° C.

### Claim 17 (depends on 16)

The film stack of claim 16, wherein the treating comprises using one of a high density plasma and an atmospheric plasma.

### Claim 18 (depends on 16)

The film stack of claim 16, wherein the titanium oxide layer includes an X-ray diffraction peak associated with rutile titanium oxide.