# US 8,541,820 B2 · Semiconductor device including through-electrode

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,541,820 B2
- Document ID: US8541820B2
- Status: Granted
- Kind: B2
- Application number: 12/822,735
- Filed: 2010-06-24
- Published: 2010-12-30
- Granted: 2013-09-24
- Earliest claimed: 2009-06-29
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Yuko Hayasaki; Kenichiro Hagiwara
- Inventors: Yuko Hayasaki; Kenichiro Hagiwara
- Web page: https://patentgrep.com/patent/US8541820B2

## CPC

- H10F 39/804: {Containers or encapsulations}
- H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12}
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes}
- H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/2125: {Top-view shapes}
- H10W 20/216: {characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 72/019: {of bond pads}
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/922: {Bond pads being integral with underlying chip-level interconnections}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

According to one embodiment, a semiconductor device includes the following structure. The first insulating film is formed on a first major surface of a semiconductor substrate. The electrode pad is formed in the first insulating film. The electrode pad includes a conductive film. At least a part of the conductive film includes a free region in which the conductive film is not present. The external connection terminal is formed on a second major surface facing the first major surface. The through-electrode is formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad. The first insulating film is present in the free region, and a step, on a through-electrode side, between the first insulating film being present in the free region and the electrode pad is not greater than a thickness of the electrode pad.

## Claims

### Claim 1

A semiconductor device comprising:
a first insulating film formed on a first major surface of a semiconductor substrate;
an electrode pad formed in the first insulating film on the first major surface, the electrode pad including a conductive film, and at least a part of the electrode pad including a free region in which the conductive film is not present when viewed from a direction perpendicular to the first major surface of the semiconductor substrate;
an external connection terminal formed on a second major surface facing the first major surface of the semiconductor substrate;
a through-electrode formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad, the through-electrode electrically connecting the electrode pad and the external connection terminal to each other,
and a dummy film formed in the first insulating film between the semiconductor substrate and the electrode pad, the dummy film being arranged at a position corresponding to the electrode pad in a direction perpendicular to the first major surface of the semiconductor substrate,
wherein the first insulating film is present in the free region included in the electrode pad, and the first insulating film in the free region in contact with the through-electrode has a thickness less than a thickness of the electrode pad.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1,
wherein the dummy film has substantially the same pattern as the electrode pad when viewed from a direction perpendicular to the first major surface of the semiconductor substrate.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein the dummy film has a pattern smaller than the electrode pad when viewed from a direction perpendicular to the first major surface of the semiconductor substrate.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1,
wherein the dummy film has a low etching selectivity ratio to the semiconductor substrate and has a high etching selectivity ratio to the first insulating film.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, further comprising:
an imaging element formed on the first major surface of the semiconductor substrate;
a color filter arranged on the imaging element to correspond to the imaging element; and
a microlens arranged on the color filter.

### Claim 6

A camera module comprising:
a first insulating film formed on a first major surface of a semiconductor substrate;
an electrode pad formed in the first insulating film on the first major surface, the electrode pad including a conductive film, and at least a part of the electrode pad including a free region in which the conductive film is not present when viewed from a direction perpendicular to the first surface of the semiconductor substrate;
an external connection terminal formed on a second major surface facing the first major surface of the semiconductor substrate;
a through-electrode formed in a through-hole formed from the second major surface side of the semiconductor substrate and reaching the electrode pad, the through-electrode electrically connecting the electrode pad and the external connection terminal to each other;
a dummy film formed in the first insulating film between the semiconductor substrate and the electrode pad, the dummy film being arranged at a position corresponding to the electrode pad in a direction perpendicular to the first major surface of the semiconductor substrate,
an imaging element formed on the first major surface of the semiconductor substrate;
a color filter arranged on the imaging element to correspond to the imaging element;
a microlens arranged on the color filter; and
an imaging lens arranged on the microlens,
wherein the first insulating film is present in the free region included in the electrode pad, and the first insulating film in the free region in contact with the through-electrode has a thickness less than a thickness of the electrode pad.

### Claim 7 (depends on 6)

The camera module according to claim 6,
wherein the dummy film has substantially the same pattern as the electrode pad when viewed from a direction perpendicular to the first major surface of the semiconductor substrate.