# US 8,541,807 B2 · Semiconductor light emitting device and light emitting apparatus having the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,807 B2 - Document ID: US8541807B2 - Status: Granted - Kind: B2 - Application number: 13/240,477 - Filed: 2011-09-22 - Published: 2012-01-12 - Granted: 2013-09-24 - Earliest claimed: 2007-08-09 - Assignees: LG Innotek Co., Ltd. - Applicants: Kyung Jun Kim; Hyo Kun Son - Inventors: Kyung Jun Kim; Hyo Kun Son - Web page: https://patentgrep.com/patent/US8541807B2 ## CPC - H10H 20/8314: {extending at least partially onto an outer side surface of the bodies} - H10H 20/835: {Reflective materials} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a second electrode electrically connected to the second conductive type semiconductor layer, a plurality of first electrodes disposed on a plurality of sidewalls of the first conductive type semiconductor layer, and wherein the plurality of first electrodes are spaced apart from each other. ## Claims ### Claim 1 A light emitting apparatus comprising: a semiconductor light emitting device comprising a first electrode and a second electrode; a first electrode lead disposed under the semiconductor light emitting device and electrically connected to the first electrode; and a second electrode lead electrically connected to the second electrode of the semiconductor light emitting device, wherein the semiconductor light emitting device comprises: a substrate; a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a dielectric layer disposed on sidewalls of the active layer and the second conductive type semiconductor layer, wherein the first electrode includes an electrode pad on the plurality of sidewalls of the first conductive type semiconductor layer and a reflective electrode between the electrode pad and each of the sidewalls of the first conductive type semiconductor layer, wherein the second electrode is in contact with a top surface of the second conductive type semiconductor layer, wherein the second conductive type semiconductor layer is electrically connected to the active layer and the second electrode, wherein the active layer is electrically connected to the second conductive type semiconductor layer and the first conductive type semiconductor layer, wherein the first conductive type semiconductor layer includes an n-type semiconductor layer and the second conductive type semiconductor layer includes a p-type semiconductor layer, wherein the dielectric layer vertically overlaps with the reflective electrode and the electrode pad, and wherein a lower portion of the dielectric layer is located at a higher position than a top edge the electrode pad. ### Claim 2 (depends on 1) A light emitting apparatus according to claim 1, wherein the dielectric layer is disposed on sidewalls of the first conductive type semiconductor layer. ### Claim 3 A semiconductor light emitting device comprising: a substrate; a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a dielectric layer disposed on sidewalls of the active layer and the second conductive type semiconductor layer; and a first electrode on a plurality of sidewalls of at least one of the substrate and the first conductive semiconductor layer, wherein the first electrode includes an electrode pad on the plurality of sidewalls of the first conductive type semiconductor layer and a reflective electrode between the electrode pad and each of the sidewalls of the first conductive type semiconductor layer, wherein the first conductive type semiconductor layer includes an n-type semiconductor layer and the second conductive type semiconductor layer includes a p-type semiconductor layer, wherein the dielectric layer vertically overlaps with the reflective electrode and the electrode pad, wherein a bottom surface of the first conductive type semiconductor layer has a same width as a bottom surface of the active layer, and wherein a lower portion of the dielectric layer is located at a higher position than a top edge the electrode pad. ### Claim 4 (depends on 3) The semiconductor light emitting device according to claim 3, wherein a top of the substrate comprises a protrusion/groove pattern. ### Claim 5 (depends on 3) The semiconductor light emitting device according to claim 3, wherein the first electrode is formed of a material selected from the group consisting of Al, Ag, Pd, Rh, Pt, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au, and an alloy thereof. ### Claim 6 (depends on 3) The semiconductor light emitting device according to claim 3, wherein the dielectric layer extends to sidewalls of the first conductive type semiconductor layer. ### Claim 7 (depends on 3) The semiconductor light emitting device according to claim 3, comprising a transparent electrode layer on the second conductive type semiconductor layer. ### Claim 8 A semiconductor light emitting device comprising: a substrate; a light emitting structure disposed on the substrate and comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a second electrode electrically connected to the second conductive type semiconductor layer; a dielectric layer disposed on sidewalls of the active layer and the second conductive type semiconductor layer; and a first electrode disposed on a plurality of sidewalls of the first conductive type semiconductor layer, wherein the first electrode includes an electrode pad on the plurality of sidewalls of the first conductive type semiconductor layer and a reflective electrode between the electrode pad and each of the sidewalls of the first conductive type semiconductor layer, wherein the dielectric layer vertically overlaps with the reflective electrode and the electrode pad, and wherein a lower portion of the dielectric layer is located at a higher position than a top edge the electrode pad. ### Claim 9 (depends on 8) The semiconductor light emitting device according to claim 8, wherein a thickness of the first conductive type semiconductor layer is about 3-30 μm. ### Claim 10 (depends on 8) The semiconductor light emitting device according to claim 8, wherein the substrate comprises a conductive substrate, and wherein the reflective electrode and the electrode pad are located at a plurality of sidewalls of the conductive substrate. ### Claim 11 (depends on 8) The semiconductor light emitting device according to claim 8, wherein the substrate comprises a dielectric substrate, and wherein the reflective electrode and the electrode pad are located at a plurality of sidewalls of the dielectric substrate. ### Claim 12 (depends on 8) The semiconductor light emitting device according to claim 8, comprising at least one of a buffer layer and an undoped semiconductor layer between the substrate and the first conductive type semiconductor layer. ### Claim 13 (depends on 8) The semiconductor light emitting device according to claim 8, wherein the first electrode is disposed on opposite sidewalls of the substrate and the first conductive type semiconductor layer. ### Claim 14 (depends on 13) The semiconductor light emitting device according to claim 13, wherein at least one of the sidewalls of the substrate and the first conductive type semiconductor layer is spaced apart from the first electrode. ### Claim 15 (depends on 8) The semiconductor light emitting device according to claim 8, comprising a transparent electrode layer disposed between the second electrode and the second conductive type semiconductor layer, wherein the transparent electrode layer is in contact with a top surface of the second conductive type semiconductor layer. ### Claim 16 (depends on 8) The semiconductor light emitting device according to claim 8, wherein the reflective electrode contacts the dielectric layer on the sidewalls of the first conductive type semiconductor layer. ### Claim 17 (depends on 16) The semiconductor light emitting device according to claim 16, wherein the electrode pad contacts the dielectric layer on the sidewalls of the first conductive type semiconductor layer. ### Claim 18 (depends on 17) The semiconductor light emitting device according to claim 17, wherein the reflective layer has a thickness less than a thickness of the dielectric layer. ### Claim 19 (depends on 16) The semiconductor light emitting device according to claim 16, wherein a bottom surface of the first conductive type semiconductor layer has a same width as a bottom surface of the active layer. ### Claim 20 (depends on 16) The semiconductor light emitting device according to claim 16, wherein the reflective electrode includes a multi-layer and the electrode pad includes a multi-layer.