# US 8,541,796 B2 · Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device

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- Number: US 8,541,796 B2
- Document ID: US8541796B2
- Status: Granted
- Kind: B2
- Application number: 11/638,581
- Filed: 2006-12-14
- Published: 2007-06-21
- Granted: 2013-09-24
- Earliest claimed: 2005-12-16
- Assignees: Sharp Kabushiki Kaisha
- Applicants: Yoshinobu Kawaguchi; Takeshi Kamikawa
- Inventors: Yoshinobu Kawaguchi; Takeshi Kamikawa
- Web page: https://patentgrep.com/patent/US8541796B2

## CPC

- H01S 5/028: Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H01S 5/2231: {with inner confining structure only between the active layer and the upper electrode}
- H01S 5/0021: {Degradation or life time measurements}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H01S 2304/00: Special growth methods for semiconductor lasers
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.

## Claims

### Claim 1

A nitride semiconductor light emitting device comprising:
a light emitting portion coated with a coating film, wherein
said light emitting portion is formed of a nitride semiconductor, and
said coating film is formed of a stack of an oxynitride film and an oxide film, and
said oxynitride film is an aluminum oxynitride film, and said oxynitride film is in contact with said light emitting portion, and
said oxide film is in contact with said oxynitride film, said oxynitride film being disposed between said oxide film and said light emitting portion, and
a substrate of the nitride semiconductor light emitting device is a GaN substrate, and
the nitride semiconductor light emitting device is a nitride semiconductor laser device and said light emitting portion is a facet of a cavity, the facet being a resonator face and a primary light emitting surface of the nitride semiconductor laser device.

### Claim 2 (depends on 1)

The nitride semiconductor light emitting device according to claim 1, wherein said oxide film is one of aluminum oxide film, silicon oxide film, titanium oxide film, hafnium oxide film, zirconium oxide film, niobium oxide film, tantalum oxide film, and yttrium oxide film.

### Claim 3 (depends on 1)

The nitride semiconductor light emitting device according to claim 1, wherein the facet is a cleaved surface of the nitride semiconductor light emitting device.

### Claim 4 (depends on 1)

A method of fabricating the nitride semiconductor light emitting device according to claim 1, comprising the steps of:
providing a cleavage so as to form said facet of said cavity; and
coating said facet of said cavity with the coating film formed of the oxynitride film deposited adjacent to said facet of said cavity and the oxide film deposited on said oxynitride film.

### Claim 5 (depends on 4)

The method of fabricating the nitride semiconductor light emitting device according to claim 4, wherein said oxynitride film is fabricated by using aluminum oxide as a target.

### Claim 6

A nitride semiconductor light emitting device comprising:
a light emitting portion coated with a coating film, wherein
said light emitting portion is formed of a nitride semiconductor, and
said coating film is formed of a stack of an oxynitride film and an oxide film, and said oxynitride film is in contact with said light emitting portion, and
said oxynitride film is an aluminum oxynitride film, and
said oxide film is in contact with said oxynitride film, said oxynitride film being disposed between said oxide film and said light emitting portion,
wherein said oxide film is not silicon oxide film, and
a substrate of the nitride semiconductor light emitting device is a GaN substrate, and
the nitride semiconductor light emitting device is a nitride semiconductor laser device and said light emitting portion is a facet of a cavity, the facet being a resonator face and a primary light emitting surface of the nitride semiconductor laser device.

### Claim 7

A nitride semiconductor light emitting device comprising:
a light emitting portion coated with a coating film, the light emitting portion being an endface perpendicular to a lengthwise direction of a ridged stripe portion of the nitride semiconductor light emitting device, wherein
said light emitting portion is formed of a nitride semiconductor, and
said coating film is formed of a stack of an oxynitride film and an oxide film, and
said oxynitride film is an aluminum oxynitride film, and said oxynitride film is in contact with said light emitting portion, and
said oxide film is in contact with said oxynitride film, said oxynitride film being disposed between said oxide film and said light emitting portion, and
a substrate of the nitride semiconductor light emitting device is a GaN substrate, and
the nitride semiconductor light emitting device is a nitride semiconductor laser device and said light emitting portion is a facet of a cavity, the facet being a resonator face and a primary light emitting surface of the nitride semiconductor laser device.

### Claim 8

A nitride semiconductor light emitting device comprising:
a light emitting portion coated with a coating film, the light emitting portion being an endface perpendicular to a lengthwise direction of a ridged stripe portion of the nitride semiconductor light emitting device, wherein
said light emitting portion is formed of a nitride semiconductor, and
said coating film is formed of a stack of an oxynitride film and an oxide film, and said oxynitride film is in contact with said light emitting portion, and
said oxynitride film is an aluminum oxynitride film, and
said oxide film is in contact with said oxynitride film, said oxynitride film being disposed between said oxide film and said light emitting portion,
wherein said oxide film is not silicon oxide film, and
a substrate of the nitride semiconductor light emitting device is a GaN substrate, and
the nitride semiconductor light emitting device is a nitride semiconductor laser device and said light emitting portion is a facet of a cavity, the facet being a resonator face and a primary light emitting surface of the nitride semiconductor laser device.