# US 8,541,793 B2 · Light emitting diode device and method for fabricating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,793 B2 - Document ID: US8541793B2 - Status: Granted - Kind: B2 - Application number: 13/251,460 - Filed: 2011-10-03 - Published: 2012-01-26 - Granted: 2013-09-24 - Earliest claimed: 2010-02-04 - Applicants: Yu-Nung Shen; Tsung-Chi Wang - Inventors: Yu-Nung Shen; Tsung-Chi Wang - Web page: https://patentgrep.com/patent/US8541793B2 ## CPC - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 72/0198: {batch processes} - H10H 20/832: characterised by their material - H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient} - H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting diode device includes: at least one light emitting diode chip, which includes a semiconductor unit, two electrodes that are disposed on an electrode-mounting surface of the semiconductor unit, a light-transmissive insulating layer that is disposed on the electrode-mounting surface and that has two via holes, a reflective metal layer disposed on a portion of the light-transmissive insulating layer, a protective insulating layer that is disposed on the reflective metal layer, a conductor-receiving insulating layer that has two conductor-receiving holes respectively in communication with the via holes, and two conductor units that are formed respectively in the conductor-receiving holes; and a light-transmissive envelope layer that covers a surface of the light emitting diode chip opposite to the electrode-mounting surface, that extends to cover outer lateral surfaces of the light emitting diode chip, and that is doped with a fluorescence powder. ## Claims ### Claim 1 A light emitting diode device, comprising: at least one light emitting diode chip, which includes a semiconductor unit that has p-type and n-type electrode regions, two electrodes that are disposed on an electrode-mounting surface of said semiconductor unit and that are connected respectively and electrically to said p-type and n-type electrode regions, a light-transmissive insulating layer that is disposed on said electrode-mounting surface and that has two via holes each of which exposes a respective one of said two electrodes, a reflective metal layer disposed on a portion of said light-transmissive insulating layer corresponding to said p-type electrode region, a protective insulating layer that is disposed on said reflective metal layer and that extends to said electrode-mounting surface, a conductor-receiving insulating layer that has two conductor-receiving holes respectively in communication with said via holes, and two conductor units that are formed respectively in said conductor-receiving holes and are connected electrically and respectively to said two electrodes; and a light-transmissive envelope layer that covers a surface of said light emitting diode chip opposite to said electrode-mounting surface, that extends to cover outer lateral surfaces of said light emitting diode chip, and that is doped with a fluorescence powder. ### Claim 2 (depends on 1) The light emitting diode device of claim 1, further comprising two conductive layers formed respectively on said conductor units and extending to said light-transmissive envelope layer at said outer lateral surfaces of said light emitting diode chip, each of said conductive layers having a layer surface facing an unit surface of a respective one of said conductor units, said layer surface having a greater area than that of said unit surface. ### Claim 3 (depends on 2) The light emitting diode device of claim 2, which comprises a plurality of said light emitting diode chips, wherein said electrodes, which are electrically connected to said p-type and n-type electrode regions, are electrically interconnected to each other in series and/or parallel through said conductive layers such that said light emitting diode chips are formed into an AC/DC 100-130V light emitting diode module, or an AC/DC 200-240V light emitting diode module. ### Claim 4 (depends on 2) The light emitting diode device of claim 2, further comprising a solder ball disposed between one of said conductor units and a respective one of said conductive layers. ### Claim 5 (depends on 1) The light emitting diode device of claim 1, wherein each of said conductor units is constituted by: a first conductor made of a material selected from silver, aluminum, and an alloy thereof; a second conductor made of a material selected from chromium, titanium, copper, and alloys thereof; a third conductor made of a material selected from nickel, copper, chromium, and alloys thereof; and a fourth conductor made of a material selected from nickel, gold, and an alloy thereof. ### Claim 6 A light emitting diode device, comprising: at least one light emitting diode chip, which includes a semiconductor unit that has p-type and n-type electrode regions, two electrodes that are disposed on an electrode-mounting surface of said semiconductor unit and that are connected respectively and electrically to said p-type and n-type electrode regions, a light-transmissive insulating layer that is disposed on said electrode-mounting surface and that has two via holes each of which exposes a respective one of said two electrodes, a reflective metal layer disposed on said light-transmissive insulating layer, a protective insulating layer that is disposed on a portion of said reflective metal layer corresponding to said n-type electrode region, and that has an electrode-exposing hole to expose one of said electrodes at said n-type electrode region, a conductor-receiving insulating layer that has two conductor-receiving holes respectively in communication with said via holes, and two conductor units that are formed respectively in said conductor-receiving holes and are connected electrically and respectively to said two electrodes; and a light-transmissive envelope layer that covers a surface of said light emitting diode chip opposite to said electrode-mounting surface, that extends to cover outer lateral surfaces of said light emitting diode chip, and that is doped with a fluorescence powder. ### Claim 7 (depends on 6) The light emitting diode device of claim 6, further comprising two conductive layers formed respectively on said conductor units and extending to said light-transmissive envelope layer at said outer lateral surfaces of said light emitting diode chip, each of said conductive layers having a layer surface facing an unit surface of a respective one of said conductor units, said layer surface having a greater area than that of said unit surface. ### Claim 8 (depends on 7) The light emitting diode device of claim 7, which comprises a plurality of said light emitting diode chips, wherein said electrodes, which are electrically connected to said p-type and n-type electrode regions, are electrically interconnected to each other in series and/or parallel through said conductive layers such that said light emitting diode chips are formed into an AC/DC 100-130V light emitting diode module, or an AC/DC 200-240V light emitting diode module. ### Claim 9 (depends on 7) The light emitting diode device of claim 7, further comprising a solder ball disposed between one of said conductor units and a respective one of said conductive layers. ### Claim 10 (depends on 6) The light emitting diode device of claim 6, wherein each of said conductor units is constituted by: a first conductor made of a material selected from silver, aluminum, and an alloy thereof; a second conductor made of a material selected from chromium, titanium, copper, and alloys thereof; a third conductor made of a material selected from nickel, copper, chromium, and alloys thereof; and a fourth conductor made of a material selected from nickel, gold, and an alloy thereof. ### Claim 11 A light emitting diode device, comprising: at least one light emitting diode chip, which includes a semiconductor unit that has p-type and n-type electrode regions, two electrodes that are disposed on an electrode-mounting surface of said semiconductor unit and that are connected respectively and electrically to said p-type and n-type electrode regions, a light-transmissive insulating layer that is disposed on said electrode-mounting surface and that has two via holes each of which exposes a respective one of said two electrodes, a conductor-receiving insulating layer that is formed on said light-transmissive insulating layer and that has two conductor-receiving holes respectively in communication with said via holes, two conductor units that are formed respectively in said conductor-receiving holes and are connected electrically and respectively to said two electrodes, a passivation layer that is disposed on said conductor-receiving insulating layer and that has two conductor-exposing holes to partially and respectively expose said conductor units, and two solder balls that are respectively and electrically connected to said conductor units through said conductor-exposing holes; and a light-transmissive envelope layer that covers a surface of said light emitting diode chip opposite to said electrode-mounting surface, that extends to cover outer lateral surfaces of said light emitting diode chip, and that is doped with a fluorescence powder. ### Claim 12 (depends on 11) The light emitting diode device of claim 11, further comprising two conductive layers formed respectively on said solder balls and extending to said light-transmissive envelope layer at said outer lateral surfaces of said light emitting diode chip, each of said conductive layers having a layer surface facing an unit surface of a respective one of said conductor units, said layer surface having a greater area than that of said unit surface. ### Claim 13 (depends on 12) The light emitting diode device of claim 12, which comprises a plurality of said light emitting diode chips, wherein said electrodes, which are electrically connected to said p-type and n-type electrode regions, are electrically interconnected to each other in series and/or parallel through said conductive layers such that said light emitting diode chips are formed into an AC/DC 100-130V light emitting diode module, or an AC/DC 200-240V light emitting diode module. ### Claim 14 (depends on 11) The light emitting diode device of claim 11, wherein each of said conductor units is constituted by: a first conductor made of a material selected from silver, aluminum, and an alloy thereof; a second conductor made of a material selected from chromium, titanium, copper, and alloys thereof; a third conductor made of a material selected from nickel, copper, chromium, and alloys thereof; and a fourth conductor made of a material selected from nickel, gold, and an alloy thereof. ### Claim 15 A method for fabricating light emitting diode devices, comprising: providing a plurality of light emitting diode chips, each of which includes a semiconductor unit that has p-type and n-type electrode regions, two electrodes that are disposed on an electrode-mounting surface of the semiconductor unit and that are connected respectively and electrically to the p-type and n-type electrode regions, a light-transmissive insulating layer that is disposed on the electrode-mounting surface and that has two via holes each of which exposes a respective one of the two electrodes, a conductor-receiving insulating layer that is formed on the light-transmissive insulating layer and that has two conductor-receiving holes respectively in communication with the via holes, and two conductor units that are formed respectively in the conductor-receiving holes and are connected electrically and respectively to the two electrodes; arranging the light emitting diode chips on a supporting face of a supporting body in a matrix; forming over the supporting face of the supporting body a light-transmissive envelope layer that is doped with a fluorescence powder so as to cover all of the light emitting diode chips; removing the supporting body to expose and permit the conductor units to connect to an external circuit; and performing a cutting process to obtain light emitting diode devices each having at least one of the light emitting diode chips. ### Claim 16 (depends on 15) The method of claim 15, further comprising, before performing the cutting process, forming a protective layer over a surface where the light-transmissive envelope layer and the conductor units are flush with each other, the protective layer including a plurality of conductor-exposing holes that expose the conductor units; and forming a conductive material in the conductor-exposing holes to electrically connect to the conductor units. ### Claim 17 A method for fabricating light emitting diode devices, comprising: providing a plurality of light emitting diode chips, each of which includes a semiconductor unit that has p-type and n-type electrode regions, two electrodes that are disposed on an electrode-mounting surface of the semiconductor unit and that are connected respectively and electrically to the p-type and n-type electrode regions, a light-transmissive insulating layer that is disposed on the electrode-mounting surface and that has two via holes each of which exposes a respective one of the two electrodes, a reflective metal layer disposed on the light-transmissive insulating layer, a protective insulating layer that is disposed on a portion of the reflective metal layer corresponding to the n-type electrode region, and that has an electrode-exposing hole to expose one of the electrodes at the n-type electrode region, a conductor-receiving insulating layer that has two conductor-receiving holes respectively in communication with the via holes, and two conductor units that are formed respectively in the conductor-receiving holes and are connected electrically and respectively to the two electrodes; arranging the light emitting diode chips on a supporting face of a supporting body in a matrix; forming over the supporting face of the supporting body a light-transmissive envelope layer that is doped with a fluorescence powder so as to coverall of the light emitting diode chips; removing the supporting body to expose and permit the conductor units to connect to an external circuit; and performing a cutting process to obtain light emitting diode devices each having at least one of the light emitting diode chips. ### Claim 18 (depends on 17) The method of claim 17, further comprising, before performing the cutting process, forming a protective layer over a surface where the light-transmissive envelope layer and the conductor units are flush with each other, the protective layer including a plurality of conductor-exposing holes that expose the conductor units; and forming a conductive material in the conductor-exposing holes to electrically connect to the conductor units. ### Claim 19 A method for fabricating light emitting diode devices, comprising: providing a plurality of light emitting diode chips, each of which includes a semiconductor unit that has p-type and n-type electrode regions, two electrodes that are disposed on an electrode-mounting surface of the semiconductor unit and that are connected respectively and electrically to the p-type and n-type electrode regions, a light-transmissive insulating layer that is disposed on the electrode-mounting surface and that has two via holes each of which exposes a respective one of the two electrodes, a conductor-receiving insulating layer that is formed on the light-transmissive insulating layer and that has two conductor-receiving holes respectively in communication with the via holes, two conductor units that are formed respectively in the conductor-receiving holes and are connected electrically and respectively to the two electrodes, a passivation layer that is disposed on the conductor-receiving insulating layer and that has two conductor-exposing holes to partially and respectively expose the electrodes, and two solder balls that are connected electrically and respectively to the conductor units through the conductor-exposing holes, one of the conductor-receiving holes, which is connected to the electrode in the p-type electrode region, exposing a portion of the light-transmissive insulating layer situated above the p-type electrode region so that one of the conductor units formed in said one of the conductor-receiving holes is able to serve as a reflective metal layer; arranging the light emitting diode chips on a supporting face of a supporting body in a matrix; forming over the supporting face of the supporting body a light-transmissive envelope layer that is doped with a fluorescence powder so as to cover all of the light emitting diode chips; removing the supporting body to expose and permit the conductor units to connect to an external circuit; and performing a cutting process to obtain light emitting diode devices each having at least one of the light emitting diode chips. ### Claim 20 (depends on 19) The method of claim 19, further comprising, before performing the cutting process, forming a protective layer over a surface where the light-transmissive envelope layer and the conductor units are flush with each other, the protective layer including a plurality of conductor-exposing holes that expose the conductor units; and forming a conductive material in the conductor-exposing holes to electrically connect to the conductor units.