# US 8,541,781 B2 · Semiconductor device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,781 B2 - Document ID: US8541781B2 - Status: Granted - Kind: B2 - Application number: 13/410,604 - Filed: 2012-03-02 - Published: 2012-09-13 - Granted: 2013-09-24 - Earliest claimed: 2011-03-10 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Kosei Noda - Inventors: Kosei Noda - Web page: https://patentgrep.com/patent/US8541781B2 ## CPC - H10D 30/031: {of thin-film transistors [TFT]} - H10B 41/70: the floating gate being an electrode shared by two or more components - H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D 87/00: Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A semiconductor device includes an oxide semiconductor film including a pair of first regions, a pair of second regions, and a third region; a pair of electrodes in contact with the oxide semiconductor film; a gate insulating film over the oxide semiconductor film; and a gate electrode provided between the pair of electrodes with the gate insulating film interposed therebetween. The pair of first regions overlap with the pair of electrodes, the third region overlaps with the gate electrode, and the pair of second regions are formed between the pair of first regions and the third region. The pair of second regions and the third region each contain nitrogen, phosphorus, or arsenic. The pair of second regions have a higher element concentration than the third region. ## Claims ### Claim 1 A semiconductor device comprising: an oxide semiconductor film comprising a pair of first regions, a pair of second regions, and a third region; a pair of electrodes in contact with the oxide semiconductor film and overlapping with the pair of first regions; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the third region with the gate insulating film interposed therebetween, wherein the pair of second regions are provided between the pair of first regions and the third region, wherein the pair of second regions comprise one or more elements selected from the group consisting of nitrogen, phosphorus, and arsenic, wherein the third region comprises an element selected from the group consisting of nitrogen, phosphorus, and arsenic, wherein a concentration of the one or more elements in the pair of second regions is higher than a concentration of the element in the third region, and wherein a concentration of the one or more elements in the pair of the first regions is lower than the concentration of the one or more elements in the pair of the second regions. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the concentration of the one or more elements in the pair of second regions is higher than or equal to 5×1021 atoms/cm3 and lower than 5×1022 atoms/cm3, and wherein the concentration of the element in the third region is higher than or equal to 5×1020 atoms/cm3 and lower than 5×1021 atoms/cm3. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises two or more elements selected from the group consisting of In, Ga, Sn, and Zn. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises In, Ga, and Zn. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the gate insulating film is provided over the pair of electrodes. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein a width of the pair of electrodes is smaller than a width of the oxide semiconductor film in a direction perpendicular to a channel direction. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the pair of electrodes cover an end portion of the oxide semiconductor film. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the pair of second regions and the third region comprise the same element selected from the group consisting of nitrogen, phosphorus, and arsenic. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises a crystalline oxide semiconductor. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises a crystalline oxide semiconductor with c-axis alignment. ### Claim 11 A semiconductor device comprising: an oxide semiconductor film comprising In, Ga, and Zn, wherein the oxide semiconductor film comprises a channel region and a region in contact with the channel region, wherein the channel region comprises nitrogen or phosphorus at a concentration of higher than or equal to 5×1020 atoms/cm3 and lower than 5×1021 atoms/cm3, wherein the region in contact with the channel region comprises nitrogen or phosphorus at a concentration of higher than or equal to 5×1021 atoms/cm3 and lower than 5×1022 atoms/cm3, and wherein the channel region and the region in contact with the channel region comprise the same element selected from the group consisting of nitrogen and phosphorus.