# US 8,541,780 B2 · Semiconductor device having oxide semiconductor layer

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- Number: US 8,541,780 B2
- Document ID: US8541780B2
- Status: Granted
- Kind: B2
- Application number: 12/872,823
- Filed: 2010-08-31
- Published: 2011-03-10
- Granted: 2013-09-24
- Earliest claimed: 2009-09-04
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Shunpei Yamazaki; Junichiro Sakata; Kosei Noda; Masayuki Sakakura; Yoshiaki Oikawa; Hotaka Maruyama
- Inventors: Shunpei Yamazaki; Junichiro Sakata; Kosei Noda; Masayuki Sakakura; Yoshiaki Oikawa; Hotaka Maruyama
- Web page: https://patentgrep.com/patent/US8541780B2

## CPC

- H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}
- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 62/80: characterised by the materials
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10W 20/48: Insulating materials thereof
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

## Claims

### Claim 1

A semiconductor device comprising:
a first insulating layer over a substrate;
an oxide semiconductor layer over the first insulating layer; and
a second insulating layer over the oxide semiconductor layer,
wherein the first insulating layer and the second insulating layer each contain a boron at greater than or equal to 1×1018 cm−3 and less than or equal to 1×1022 cm−3.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the second insulating layer is in contact with the oxide semiconductor layer.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising a third insulating layer formed of silicon oxide between the second insulating layer and the oxide semiconductor layer.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.

### Claim 5

A semiconductor device comprising:
a first insulating layer over a substrate;
an oxide semiconductor layer over the first insulating layer; and
a second insulating layer over the oxide semiconductor layer,
wherein the first insulating layer and the second insulating layer each contain a phosphorus element at greater than or equal to 1×1019 cm−3 and less than or equal to 3×1021 cm31 3.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein the second insulating layer is in contact with the oxide semiconductor layer.

### Claim 7 (depends on 5)

The semiconductor device according to claim 5, further comprising a third insulating layer formed of silicon oxide between the second insulating layer and the oxide semiconductor layer.

### Claim 8 (depends on 5)

The semiconductor device according to claim 5, wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.

### Claim 9

A semiconductor device comprising:
a first insulating layer over a substrate;
an oxide semiconductor layer on and in contact with the first insulating layer; and
a second insulating layer on and in contact with the oxide semiconductor layer,
wherein the first insulating layer and the second insulating layer each contain a boron element at greater than or equal to 1×1018 cm−3 and less than or equal to 1×1022 cm−3.

### Claim 10 (depends on 9)

The semiconductor device according to claim 9, wherein the second insulating layer is in contact with the oxide semiconductor layer.

### Claim 11 (depends on 9)

The semiconductor device according to claim 9, further comprising a third insulating layer formed of silicon oxide between the second insulating layer and the oxide semiconductor layer.

### Claim 12 (depends on 9)

The semiconductor device according to claim 9, wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.

### Claim 13

A semiconductor device comprising:
a first insulating layer over a substrate;
an oxide semiconductor layer on and in contact with the first insulating layer; and
a second insulating layer on and in contact with the oxide semiconductor layer,
wherein the first insulating layer and the second insulating layer each contain an aluminum element at greater than or equal to 1×1018 cm−3 and less than or equal to 1×1022 cm −3.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13, wherein the second insulating layer is in contact with the oxide semiconductor layer.

### Claim 15 (depends on 13)

The semiconductor device according to claim 13, further comprising a third insulating layer formed of silicon oxide between the second insulating layer and the oxide semiconductor layer.

### Claim 16 (depends on 13)

The semiconductor device according to claim 13, wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.

### Claim 17

A semiconductor device comprising:
a first insulating layer over a substrate;
an oxide semiconductor layer over the first insulating layer; and
a second insulating layer over the oxide semiconductor layer,
wherein the first insulating layer and the second insulating layer each contain an antimony element at greater than or equal to 1×1019 cm−3 and less than or equal to 3×1021 cm −3.

### Claim 18 (depends on 17)

The semiconductor device according to claim 17, wherein the second insulating layer is in contact with the oxide semiconductor layer.

### Claim 19 (depends on 17)

The semiconductor device according to claim 17, further comprising a third insulating layer formed of silicon oxide between the second insulating layer and the oxide semiconductor layer.

### Claim 20 (depends on 17)

The semiconductor device according to claim 17, wherein the first insulating layer and the second insulating layer are each formed of silicon oxide.