# US 8,541,779 B1 · Pixel structure of organic electroluminescence apparatus

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- Number: US 8,541,779 B1
- Document ID: US8541779B1
- Status: Granted
- Kind: B1
- Application number: 13/606,027
- Filed: 2012-09-07
- Granted: 2013-09-24
- Earliest claimed: 2012-05-16
- Assignees: Au Optronics Corporation
- Applicants: Hong-Syu Chen; Shou-Wei Fang; Jen-Yu Lee; Tsung-Hsiang Shih; Hsueh-Hsing Lu; Chia-Yu Chen
- Inventors: Hong-Syu Chen; Shou-Wei Fang; Jen-Yu Lee; Tsung-Hsiang Shih; Hsueh-Hsing Lu; Chia-Yu Chen
- Web page: https://patentgrep.com/patent/US8541779B1

## CPC

- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A pixel structure of an organic electroluminescence apparatus includes at least an active device connected to a scan line and a data line, a first electrode, a dielectric material layer, a first isolating layer, a second isolating layer, an organic light-emitting material layer and a second electrode. The dielectric material layer is disposed on the first electrode and has a first opening to expose the first electrode. The first isolating layer disposed on the dielectric material layer includes an oxide semiconductor material and has a second opening to expose the first electrode. The second isolating layer is disposed on the first isolating layer and has a third opening to expose the first electrode in the first opening and the first isolating layer in a sidewall of the second opening. The organic light-emitting material layer is in the third opening. The second electrode is on the organic light-emitting layer.

## Claims

### Claim 1

A pixel structure of an organic electroluminescence apparatus, including:
a scan line and a data line;
at least an active device electrically connected to the scan line and the data line;
a first electrode;
a dielectric material layer disposed on the first electrode, the dielectric material layer having a first opening to expose the first electrode;
a first isolating layer disposed on the dielectric material layer, wherein the first isolating layer includes an oxide semiconductor material and the first isolating layer has a second opening to expose the first electrode;
a second isolating layer disposed on the first isolating layer, wherein the second isolating layer has a third opening to expose the first electrode in the first opening and the first isolating layer in a sidewall of the second opening;
an organic light-emitting material layer in the third opening; and
a second electrode disposed on the organic light-emitting material layer, wherein either one of the first electrode or the second electrode is electrically connected to the at least one active device.

### Claim 2 (depends on 1)

The pixel structure of claim 1, wherein a width of the third opening is substantially greater than a width of the second opening, so that there is a distance between a sidewall of the third opening and the sidewall of the second opening.

### Claim 3 (depends on 2)

The pixel structure of claim 2, wherein the distance is approximately 2 micrometers.

### Claim 4 (depends on 1)

The pixel structure of claim 1, wherein the first isolating layer covers the dielectric material layer in a sidewall of the first opening.

### Claim 5 (depends on 1)

The pixel structure of claim 1, wherein a material of the dielectric material layer includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, or a stack layer of at least two of the above.

### Claim 6 (depends on 1)

The pixel structure of claim 1, wherein the oxide semiconductor material includes indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO), indium-zinc oxide (IZO), gallium-zinc oxide (GZO), indium-gallium oxide (IGO), aluminum-zinc oxide (AlZnO), zinc-tin oxide (ZTO), gallium-tin oxide (GTO), antimony-tin oxide (ATO) or indium-tin oxide (ITO), or a stack layers of at least two of the above.

### Claim 7 (depends on 1)

The pixel structure of claim 1, wherein the active device includes a gate, a source, a drain and a channel layer, and the channel layer includes a metal oxide semiconductor material.

### Claim 8 (depends on 7)

The pixel structure of claim 7, wherein a sheet resistance of the oxide semiconductor material of the first isolating layer is substantially greater than or equal to a sheet resistance of the channel layer of the active device.

### Claim 9 (depends on 8)

The pixel structure of claim 8, wherein the sheet resistance of the oxide semiconductor material layer of the first isolating layer is substantially greater than 1.1E9 Ω/sq and the sheet resistance of the channel layer of the active device is substantially greater than 1E9 Ω/sq.

### Claim 10 (depends on 1)

The pixel structure of claim 1, further including a passivation layer covering the active device and the passivation layer having an opening, wherein either one of the first electrode or the second electrode electrically connected to the at lease one active device through the opening.

### Claim 11 (depends on 1)

The pixel structure of claim 1, wherein a thickness of the first isolating layer ranges from about 500 Å to about 2000 Å.

### Claim 12 (depends on 1)

The pixel structure of claim 1, wherein a thickness of the second isolating layer ranges from about 3 micrometers to about 5 micrometers.

### Claim 13 (depends on 1)

The pixel structure of claim 1, wherein the second isolating layer includes an organic insulating material.

### Claim 14 (depends on 1)

The pixel structure claim 1, wherein the first electrode and the first isolating layer are hydrophilic and the second isolating layer is hydrophobic.