# US 8,541,767 B2 · Memory component having an electrical contact free of a metal layer

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- Number: US 8,541,767 B2
- Document ID: US8541767B2
- Status: Granted
- Kind: B2
- Application number: 13/093,149
- Filed: 2011-04-25
- Published: 2012-10-25
- Granted: 2013-09-24
- Earliest claimed: 2011-04-25
- Assignees: National University of Singapore; Agency for Science, Technology and Research
- Applicants: Weiwei Lina Fang; Yee Chia Yeo; Rong Zhao; Luping Shi
- Inventors: Weiwei Lina Fang; Yee Chia Yeo; Rong Zhao; Luping Shi
- Web page: https://patentgrep.com/patent/US8541767B2

## CPC

- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10B 63/30: {comprising selection components having three or more electrodes, e.g. transistors}
- H10N 70/061: {Shaping switching materials}
- H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices}
- H10N 70/8413: {adapted for resistive heating}
- H10N 70/8822: {Sulfides, e.g. CuS}
- H10N 70/8825: {Selenides, e.g. GeSe}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- H10N 70/884: {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)}
- G11C 13/0004: {comprising amorphous/crystalline phase transition cells}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B: ELECTRONIC MEMORY DEVICES
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

According to embodiments of the present invention, a memory component is provided. The memory component includes a storage component comprising a resistance changing material; and an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide, wherein the memory component is free of a metal layer between the storage component and the electrical contact, and wherein the electrical contact is free of a metal layer.

## Claims

### Claim 1

A memory component, comprising:
a storage component comprising a resistance changing material;
an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide; and
a dielectric layer disposed within the storage component;
wherein the memory component is free of a metal layer between the storage component and the electrical contact, and
wherein the electrical contact is free of a metal layer.

### Claim 2 (depends on 1)

The memory component as claimed in claim 1, further comprising a further dielectric layer disposed on at least one side of the storage component.

### Claim 3 (depends on 1)

The memory component as claimed in claim 1, wherein the resistance changing material comprises a phase change material.

### Claim 4 (depends on 3)

The memory component as claimed in claim 3, wherein the phase change material comprises a chalcogenide or an alloy of chalcogenides.

### Claim 5 (depends on 3)

The memory component as claimed in claim 3, wherein the phase change material further comprises a dopant.

### Claim 6

A method of forming a memory component, the method comprising:
forming an electrical contact, the electrical contact comprising silicide and is free of a metal layer;
depositing a storage component over the electrical contact, the storage component comprising a resistance changing material; and
forming a dielectric layer within the storage component;
wherein the method is free of forming a metal layer between the storage component and the electrical contact.

### Claim 7

A memory component, comprising:
a storage component comprising a resistance changing material; and
an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide, and
wherein the memory component is free of a metal layer between the storage component and the electrical contact,
wherein the electrical contact is free of a metal layer, and
wherein the memory component further comprises a dielectric layer disposed over a portion of the electrical contact, wherein the portion overlaps with the entire storage component.

### Claim 8 (depends on 7)

The memory component as claimed in claim 7, wherein the dielectric layer is disposed within the storage component or in between the storage component and the electrical contact.