# US 8,541,766 B2 · Nonvolatile memory device and nonvolatile memory apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,541,766 B2 - Document ID: US8541766B2 - Status: Granted - Kind: B2 - Application number: 13/043,097 - Filed: 2011-03-08 - Published: 2011-09-08 - Granted: 2013-09-24 - Earliest claimed: 2008-09-08 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Takeshi Yamaguchi; Chikayoshi Kamata - Inventors: Takeshi Yamaguchi; Chikayoshi Kamata - Web page: https://patentgrep.com/patent/US8541766B2 ## CPC - G11C 13/003: {Cell access} - H10N 70/245: {the species being metal cations, e.g. programmable metallization cells} - H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} - H10N 70/8416: {adapted for supplying ionic species} - H10N 70/8836: {Complex metal oxides, e.g. perovskites, spinels} - G11C 2213/35: Material including carbon, e.g. graphite, grapheme - G11C 2213/55: Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer - G11C 2213/71: Three dimensional array - G11C 2213/72: Array wherein the access device being a diode - G11C 2213/75: Array having a NAND structure comprising, for example, memory cells in series or memory elements in series, a memory element being a memory cell in parallel with an access transistor - G11C 2213/79: Array wherein the access device being a transistor - H10B 63/20: {comprising selection components having two electrodes, e.g. diodes} - H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays} - G11C: STATIC STORES (semiconductor memory devices H10B) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10B: ELECTRONIC MEMORY DEVICES ## Abstract According to one embodiment, a nonvolatile memory device includes a recording layer and a conductive first layer. The recording layer includes a main group element, a transition element, and oxygen. The recording layer is capable of recording information by changing reversibly between a high resistance state and a low resistance state. The first layer is made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide. The first layer is provided adjacent to the recording layer. The first layer includes the main group element with a concentration lower than a concentration of the main group element of the recording layer. ## Claims ### Claim 1 A nonvolatile memory device, comprising: a recording layer including a main group element, a transition element, and oxygen, the recording layer being capable of recording information by changing reversibly between a high resistance state and a low resistance state; and a conductive first layer made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide and provided adjacent to the recording layer, the first layer including the main group element with a concentration lower than a concentration of the main group element of the recording layer. ### Claim 2 (depends on 1) The device according to claim 1, wherein a region of the first layer close to a first interface between the recording layer and the first layer has a concentration of the main group element higher than a concentration of the main group element of a region of the first layer far to the first interface. ### Claim 3 (depends on 1) The device according to claim 1, wherein a close region of the first layer close to a first interface between the recording layer and the first layer has a concentration of the main group element higher than a concentration of the main group element of an intermediate region of the first layer far to the first interface, and a far region of the first layer farther to the first interface than the intermediate region of the first layer has a concentration of the main group element higher than the concentration of the main group element of the intermediate region of the first layer. ### Claim 4 (depends on 1) The device according to claim 1, wherein the concentration of the main group element of the first layer is not less than 2 atomic percent and not more than 30 atomic percent. ### Claim 5 (depends on 1) The device according to claim 1, wherein a portion of the recording layer close to a first interface between the recording layer and the first layer has a concentration of the main group element lower than a concentration of the main group element of a portion of the recording layer far to the first interface. ### Claim 6 (depends on 5) The device according to claim 5, wherein a region of the first layer close to the first interface between the recording layer and the first layer has a concentration of the main group element higher than a concentration of the main group element of a region of the first layer far to the first interface. ### Claim 7 (depends on 5) The device according to claim 5, wherein the first layer has a close region, an intermediate region, and a far region, the close region being closer to the first interface between the recording layer and the first layer than the intermediate region, the far region being farther to the first interface than the intermediate region, the close region has a concentration of the main group element higher than a concentration of the main group element of the intermediate region, and the far region has a concentration of the main group element higher than the concentration of the main group element of the intermediate region. ### Claim 8 (depends on 1) The device according to claim 1, further comprising a second layer made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide and provided adjacent to the recording layer on a side opposite to the first layer, the second layer including the main group element with a concentration lower than a concentration of the main group element of the recording layer. ### Claim 9 (depends on 8) The device according to claim 8, wherein a region of the second layer close to a second interface between the recording layer and the second layer has a concentration of the main group element higher than a concentration of the main group element of a region of the second layer far to the second interface. ### Claim 10 (depends on 8) The device according to claim 8, wherein the second layer has a close region, an intermediate region and a far region, the close region being closer to a second interface between the recording layer and the second layer than the intermediate region, the far region being farther to the second interface than the intermediate region, the close region has a concentration of the main group element higher than a concentration of the main group element of the intermediate region, and the far region has a concentration of the main group element higher than the concentration of the main group element of the intermediate region. ### Claim 11 (depends on 10) The device according to claim 10, wherein a portion of the recording layer close to a second interface between the recording layer and the second layer has a concentration of the main group element lower than a concentration of the main group element of a portion of the recording layer farther to the second interface. ### Claim 12 (depends on 10) The device according to claim 10, wherein the first layer has a closer region, an intermediate region, and a father region, the closer region being closer to the first interface between the recording layer and the first layer than the intermediate region, the farther region being farther to the first interface than the intermediate region, the closer region has a concentration of the main group element higher than a concentration of the main group element of the intermediate region, and the farther region has a concentration of the main group element higher than the concentration of the main group element of the intermediate region. ### Claim 13 (depends on 12) The device according to claim 12, wherein a portion of the recording layer closer to the first interface between the recording layer and the first layer has a concentration of the main group element lower than a concentration of the main group element of a portion of the recording layer farther to the first interface. ### Claim 14 (depends on 8) The device according to claim 8, wherein a portion of the recording layer close to a second interface between the recording layer and the second layer has a concentration of the main group element lower than a concentration of the main group element of a portion of the recording layer far to the second interface. ### Claim 15 (depends on 14) The device according to claim 14, wherein a region of the first layer close to a first interface between the recording layer and the first layer has a concentration of the main group element higher than a concentration of the main group element of a region of the first layer far to the first interface. ### Claim 16 (depends on 14) The device according to claim 14, wherein the first layer has a close region, an intermediate region and far region, the close region being closer to the first interface between the recording layer and the first layer than the intermediate region, the far region being farther to the first interface than the intermediate region, the close region has a concentration of the main group element higher than a concentration of the main group element of an intermediate region, and the far region has a concentration of the main group element higher than the concentration of the main group element of the intermediate region. ### Claim 17 (depends on 1) The device according to claim 1, further comprising a second layer made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide and provided adjacent to the recording layer on a side opposite to the first layer, one layer of the first layer and the second layer being provided with a lower potential than other layer of the first layer and the second layer, a concentration of the main group element in the one layer being higher than a concentration of the main group element in the other layer. ### Claim 18 (depends on 1) The device according to claim 1, wherein the recording layer has one selected from a spinel structure represented by AxByO4 (0.1≦x≦2.2 and 1.5≦y≦2), a delafossite structure represented by AxByO2 (0.1≦x≦1.1 and 0.9≦y≦1.1), a wolframite structure represented by AxByO4 (0.5≦x≦1.1 and 0.7≦y≦1.1), and an ilmenite structure represented by AxByO3 (0.5≦x≦1.1 and 0.9≦y≦1), where A is the main group element and B is the transition element. ### Claim 19 (depends on 18) The device according to claim 18, wherein the main group element is at least one selected from the group consisting of Zn, Cd, and Hg. ### Claim 20 (depends on 19) The device according to claim 19, wherein the transition element is at least one selected from the group consisting of Cr and Mn. ### Claim 21 (depends on 18) The device according to claim 18, wherein the transition element is at least one selected from the group consisting of Cr and Mn. ### Claim 22 A nonvolatile memory apparatus, comprising: a nonvolatile memory device, including: a recording layer including a main group element, a transition element, and oxygen, the recording layer being capable of recording information by changing reversibly between a high resistance state and a low resistance state; and a conductive first layer made of at least one selected from a metal, a metal oxide, a metal nitride, and a metal carbide and provided adjacent to the recording layer, the first layer including the main group element with a concentration lower than a concentration of the main group element of the recording layer; and a drive unit configured to record information by causing the recording layer to transition between the high resistance state and the low resistance state by at least one selected from applying a voltage to the recording layer of the nonvolatile memory device and causing a current to flow in the recording layer. ### Claim 23 (depends on 22) The apparatus according to claim 22, further comprising a word line and a bit line provided with the nonvolatile memory device interposed, the drive unit being configured to perform the at least one selected from applying the voltage to the recording layer of the nonvolatile memory device and causing the current to flow in the recording layer via the word line and the bit line. ### Claim 24 (depends on 22) The apparatus according to claim 22, further comprising a probe provided together with the nonvolatile memory device, the drive unit being configured to perform the at least one selected from applying the voltage and causing the current to flow for the recording layer of the nonvolatile memory device via the probe. ### Claim 25 (depends on 22) The apparatus according to claim 22, further comprising a MIS transistor including a gate electrode and a gate insulation layer, the nonvolatile memory device being provided between the gate electrode and the gate insulation layer, the drive unit being configured to perform the at least one selected from applying the voltage to the recording layer of the nonvolatile memory device and causing the current to flow in the recording layer by the gate electrode. ### Claim 26 (depends on 22) The apparatus according to claim 22, further comprising: a first second-conductivity type semiconductor region and a second second-conductivity type semiconductor region; a first-conductivity type semiconductor region between the first second-conductivity type semiconductor region and the second second-conductivity type semiconductor region; and a gate electrode configured to control a conduction between the first second-conductivity type semiconductor region and the second second-conductivity type semiconductor region, the nonvolatile memory device being disposed between the gate electrode and the first-conductivity type semiconductor region, the drive unit being configured to perform the at least one selected from applying the voltage to the recording layer of the nonvolatile memory device and causing the current to flow in the recording layer by the gate electrode.