# US 8,541,747 B2 · Solid-state image sensor and image sensing apparatus

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- Number: US 8,541,747 B2
- Document ID: US8541747B2
- Status: Granted
- Kind: B2
- Application number: 13/446,556
- Filed: 2012-04-13
- Published: 2012-11-01
- Granted: 2013-09-24
- Earliest claimed: 2011-04-26
- Assignees: Canon Kabushiki Kaisha
- Applicants: Makiko Saito
- Inventors: Makiko Saito
- Web page: https://patentgrep.com/patent/US8541747B2

## CPC

- H10F 39/8067: {Reflectors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/811: {Interconnections}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A solid-state image sensor, comprises: a photoelectric conversion layer on which photoelectric conversion elements are arranged; and an wiring layer including at least one layer of a metal film, and an interlayer insulating film which fills a surrounding portion of the metal film, wherein the wiring layer is arranged at a position deeper than the photoelectric conversion layer on a side opposite to a light incidence side with respect to the photoelectric conversion layer, and at least a first metal film arranged at a position closest to the photoelectric conversion layer of the metal film of the wiring layer is arranged on a region which is not irradiated with light rays in a predetermined wavelength range, which light has passed through the photoelectric conversion layer.

## Claims

### Claim 1

A solid-state image sensor, comprising:
a photoelectric conversion layer on which photoelectric conversion elements are arranged; and
an wiring layer including at least one layer of a metal film, and an interlayer insulating film which fills a surrounding portion of the metal film,
wherein said wiring layer is arranged at a position deeper than said photoelectric conversion layer on a side opposite to a light incidence side with respect to said photoelectric conversion layer, and
at least a first metal film arranged at a position closest to said photoelectric conversion layer of the metal film of said wiring layer is arranged on a region which is not irradiated with light rays in a predetermined wavelength range, which light has passed through said photoelectric conversion layer.

### Claim 2 (depends on 1)

The sensor according to claim 1, further comprising a light collecting unit which collects light with which said solid-state image sensor is irradiated toward said photoelectric conversion layer.

### Claim 3 (depends on 2)

The sensor according to claim 2, wherein said light collecting unit is arranged so that a light ray of a shortest wavelength of the light rays in the predetermined wavelength range is in conjugate focus with the region.

### Claim 4 (depends on 1)

The sensor according to claim 1, wherein the light rays in the predetermined wavelength range are light rays having wavelengths longer than visible light.

### Claim 5 (depends on 4)

The sensor according to claim 4, wherein the light rays having the wavelengths longer than the visible light are light rays having wavelengths longer than 780 nm.

### Claim 6 (depends on 1)

The sensor according to claim 1, wherein the light rays in the predetermined wavelength range are infrared light rays, and are light rays having wavelengths not more than a longest wavelength which is absorbed by said photoelectric conversion layer.

### Claim 7 (depends on 1)

An image sensing apparatus, comprising:
a solid-state image sensor according to claim 1; and
an optical filter which is arranged in front of said solid-state image sensor, and is required to block off infrared light rays in a predetermined wavelength range so as to prevent said solid-state image sensor from being irradiated with the infrared light rays.

### Claim 8 (depends on 7)

The apparatus according to claim 7, wherein an opening is formed in the first metal film so as to prevent the first metal film from being irradiated with light rays having wavelengths which pass through said optical filter of the infrared light rays.

### Claim 9 (depends on 1)

An image sensing apparatus, comprising:
a solid-state image sensor according to claim 1, said solid-state image sensor having a plurality of pixels; and
an optical system required to irradiate said solid-state image sensor with light coming from an object,
wherein each of the plurality of pixels comprises the photoelectric conversion layer and at least one wiring layer, and
a positional relationship between the photoelectric conversion layer and the metal film is determined according to a positional relationship between an optical center of said optical system and each of the plurality of pixels, so as to prevent at least the first metal film from being irradiated with light rays in a predetermined wavelength range, which light rays pass through the photoelectric conversion layer.