# US 8,541,742 B2 · Bolometer-type THz wave detector

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- Number: US 8,541,742 B2
- Document ID: US8541742B2
- Status: Granted
- Kind: B2
- Application number: 13/422,120
- Filed: 2012-03-16
- Published: 2012-09-20
- Granted: 2013-09-24
- Earliest claimed: 2011-03-17
- Assignees: NEC Corporation
- Applicants: Seiji Kurashina; Masaru Miyoshi
- Inventors: Seiji Kurashina; Masaru Miyoshi
- Web page: https://patentgrep.com/patent/US8541742B2

## CPC

- G01J 5/045: {Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements (getter arrangements per se H10W76/48, H10P36/03)}
- G01J 5/0215: {Compact construction}
- G01J 5/0225: {Shape of the cavity itself or of elements contained in or suspended over the cavity}
- G01J 5/024: {Special manufacturing steps or sacrificial layers or layer structures}
- G01J 5/06: Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity (for adjusting of solid angle of collected radiation G01J5/07; means for wavelength selection G01J5/0801)
- G01J 5/0853: {having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid}
- G01J 5/20: using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)

## Abstract

The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 μm.

## Claims

### Claim 1

A bolometer-type THz wave detector having a thermal isolation structure in which a temperature detecting portion including a bolometer thin film that is connected to electrical wirings is supported in a state of being raised from a substrate by a supporting portion including the electrical wirings to be connected to a Read-out integrated circuit formed in the substrate, characterized in that:
the wave detector comprising
a reflective film for reflecting THz waves that is formed in such a position as to be opposed to the temperature detecting portion on the substrate,
an absorbing film for absorbing the THz waves that is formed on the front surface or the back surface of the temperature detecting portion or at an inner position in the temperature detecting portion, whereby an optical resonant structure formed by the reflective film and the temperature detecting portion, and
a film of dielectric transparent to the THz waves that is formed on the reflective film,
wherein the film thickness of the dielectric is set so that the distance between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 μm.

### Claim 2 (depends on 1)

The bolometer-type THz wave detector according to claim 1, further comprising an Eave-like member formed on the temperature detecting portion, the Eave-like member extending outwards from a peripheral portion of the temperature detecting portion,
wherein the absorbing film is formed on the front surface or the back surface of the temperature detecting portion or at an inner position in the temperature detecting portion and on the front surface or the back surface of the Eave-like member or at an inner position in the Eave-like member.

### Claim 3 (depends on 2)

The bolometer-type THz wave detector according to claim 2, wherein the Read-out integrated circuit and the electrical wiring are connected to each other by multilayer wirings which are formed in the dielectric film.

### Claim 4 (depends on 1)

The bolometer-type THz wave detector according to claim 1, further comprising an Eave-like member formed on the temperature detecting portion, the Eave-like member extending inwards and outwards from a peripheral portion of the temperature detecting portion,
wherein the absorbing film is formed on the front surface or the back surface of the Eave-like member or at an inner position in the Eave-like member.

### Claim 5 (depends on 4)

The bolometer-type THz wave detector according to claim 4, wherein the Read-out integrated circuit and the electrical wiring are connected to each other by multilayer wiring formed in the dielectric film.

### Claim 6 (depends on 1)

The bolometer-type THz wave detector according to claim 1,
wherein the Read-out integrated circuit and the electrical wiring are connected to each other by multilayer wirings which are formed in the dielectric film.