# US 8,541,319 B2 · Laser processing method

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- Number: US 8,541,319 B2
- Document ID: US8541319B2
- Status: Granted
- Kind: B2
- Application number: 13/388,716
- Filed: 2011-07-19
- Published: 2012-05-24
- Granted: 2013-09-24
- Earliest claimed: 2010-07-26
- Assignees: Hamamatsu Photonics K.K.
- Applicants: Hideki Shimoi; Keisuke Araki
- Inventors: Hideki Shimoi; Keisuke Araki
- Web page: https://patentgrep.com/patent/US8541319B2

## CPC

- H10P 50/644: {Anisotropic liquid etching (H10P50/61 takes precedence)}
- B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)}
- B23K 26/382: by boring
- B23K 26/384: of specially shaped holes
- B23K 26/40: taking account of the properties of the material involved
- B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
- B23K 26/55: for creating voids inside the workpiece, e.g. for forming flow passages or flow patterns
- H10W 70/095: {of vias therein}
- H10W 70/635: {Through-vias}
- B23K 2103/50: {Inorganic materials other than metals or composite materials}
- B23K 2103/56: {being semiconducting}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A laser processing method comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object, and an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step, wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object, and wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness.

## Claims

### Claim 1

A laser processing method comprising:
a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object; and
an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step;
wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object;
wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness; and
wherein the laser light converging step comprises:
a first step of repeatedly performing a step of irradiating the object with the laser light while relatively moving a converging point of the laser light along a first direction orthogonal to an irradiation direction of the laser light, while changing a depth position of the converging point in the irradiation direction; and
a second step of repeatedly performing the first step while changing a position of the converging point in a second direction orthogonal to the irradiation direction and first direction.

### Claim 2

A laser processing method comprising:
a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object; and
an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step;
wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object;
wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness;
wherein the object has a main face in a (100) plane; and
wherein the laser light converging step comprises:
a first step of repeatedly performing a step of irradiating the object with the laser light while relatively moving a converging point of the laser light along a first direction orthogonal to an irradiation direction of the laser light, while changing a depth position of the converging point in the irradiation direction; and
a second step of repeatedly performing the first step while changing a position of the converging point in a second direction orthogonal to the irradiation direction and first direction.